Monolithic Conductive Cylinders for Reliable Stacked Die Bonding
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Solution Overview
Problem
Conventional semiconductor dies face issues with ineffective bonding due to underfilling or overfilling of conductive cylinders, leading to concave or convex protrusions that cause connection failures and die separation, exacerbated by stress and pressure during cooling and solidification.
Innovation Solution
The implementation of monolithic conductive cylinders that extend through multiple semiconductor dies, eliminating the need for additional conductive material to connect adjacent dies, and distributing stress along their length.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional conductive cylinders are filled with conductive material, then electrical connection between dies is achieved, but bonding effectiveness deteriorates due to underfilling or overfilling causing concave or convex protrusions
Solution Approach 1:
The patent merges the conductive cylinder structure with the die substrate to form a monolithic integrated structure. The conductive cylinder is formed as an integral part of the die during the semiconductor manufacturing process, eliminating the separate filling step that causes underfilling or overfilling issues. This integration ensures precise dimensional control and consistent bonding surfaces.
Solution Approach 2:
The conductive cylinder is formed preliminarily during die fabrication before the bonding process. By pre-forming the conductive structure with precise dimensions as part of the die substrate, the patent eliminates the need for subsequent material filling operations that are prone to precision errors and bonding defects.
2Volume of moving object
If bond line thickness is reduced to decrease assembly volume, then device compactness is improved, but bonding reliability deteriorates due to stress and pressure during cooling and solidification
Solution Approach 1:
By merging the conductive cylinder with the die substrate into a monolithic structure, the patent eliminates the separate bond line that would experience thermal stress during cooling. The integrated structure ensures that the conductive path and die substrate move as a unified entity, preventing stress-induced bonding failures.
Solution Approach 2:
The patent converts the potential harm of thermal expansion and contraction stresses into a benefit by integrating the conductive structure with the die substrate. This integration ensures that both components experience and accommodate thermal stresses together, transforming what would be a source of bonding failure into a strengthened unified structure.
3Productivity
If multiple semiconductor dies are stacked vertically to increase capacity and speed, then device performance is improved, but manufacturing complexity increases
Solution Approach 1:
The patent applies segmentation by creating standardized dies with integrated monolithic conductive cylinders that can be independently fabricated and then stacked. Each die is a self-contained unit with built-in conductive structures, allowing for modular assembly that simplifies the overall manufacturing process despite the multi-die configuration.
Solution Approach 2:
The patent changes the manufacturing parameter from post-assembly conductive material filling to pre-fabrication monolithic structure formation. This parameter change enables standardized die production that can be scaled and stacked systematically, reducing the complexity of assembling multiple dies with precise conductive alignment.
Data Source
AI summary
A semiconductor device having monolithic conductive cylinders, and associated systems and methods, are disclosed herein. The semiconductor device can include a semiconductor substrate, a conductive pad, an opening, and a top dielectric layer. The conductive pad may be at a first surface of the semiconductor substrate. The opening may be ring-shaped and extend through the semiconductor substrate from the conductive pad to a second surface and define a side wall. The liner may coat the side wall and the top dielectric layer may cover the second surface and may fill the opening. A second ring-shaped opening may be formed through the semiconductor device and the opening and a conductive material plated therein.