Monolithic Multi-Color LED Integration on a Single GaN Substrate
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Solution Overview
Problem
Current techniques for producing small light emitting diodes (LEDs) in large numbers and high densities capable of generating different colors are cumbersome, time-consuming, and costly, making it difficult to implement them in sophisticated display architectures like light field displays.
Innovation Solution
Monolithically integrating light emitting structures on a single semiconductor substrate with buffer layers made of GaN, where each structure has an active area configured to generate different colors of light, and includes a p-doped layer made of GaN, enabling efficient fabrication and integration of multiple LEDs on a single substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional techniques are used to produce small LEDs in large numbers and high densities, then the number of light emitting elements can be increased, but the manufacturing process becomes cumbersome, time-consuming, and costly
Solution Approach 1:
The patent merges multiple different light emitting structures (different colors) onto a single semiconductor substrate, integrating what would traditionally require separate fabrication processes into one unified device. This combining approach increases the number of light emitting elements while reducing manufacturing complexity by eliminating the need for separate production and assembly of individual LEDs.
Solution Approach 2:
The semiconductor substrate serves as a universal platform that can host multiple types of light emitting structures simultaneously, each capable of generating different colors of light. This multi-functional substrate allows a single manufacturing process to produce diverse light emitting elements, thereby increasing productivity without proportionally increasing device complexity.
2Quantity of substance
If more light emitting elements are added to displays to increase count and density, then better user experience and new applications are enabled, but design and manufacturing challenges increase
Solution Approach 1:
By combining multiple light emitting structures onto one substrate, the patent enables mass production of numerous light emitting elements through a single manufacturing process, significantly improving ease of manufacture while achieving high element counts and densities required for advanced displays.
3Length of moving object
If small LEDs are used to achieve ever smaller light emitting elements, then both count and density increase, but effective and efficient techniques for making them are not widely available
Solution Approach 1:
The universal semiconductor substrate platform can accommodate various light emitting structures of different sizes and types, making the fabrication technique adaptable and versatile for producing small LEDs in different configurations and colors, thereby addressing the lack of widely available efficient fabrication techniques.
4Adaptability or versatility
If small LEDs are integrated into sophisticated display architectures with stringent requirements, then advanced display capabilities are achieved, but integration becomes rather difficult
Solution Approach 1:
The patent merges multiple light emitting structures into a single integrated device that can be directly implemented in sophisticated display architectures, reducing integration difficulty by providing a pre-integrated solution that meets stringent display requirements while enabling advanced capabilities.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the efficient design and fabrication of large numbers of small LEDs that can be integrated into advanced display architectures, such as light field displays, with improved resolution and density, reducing manufacturing complexity and cost.
Implementation Method 1
the active area of different light emitting structures is configured to directly generate a different color of light
Implementation Method 2
light emitting structures, which are epitaxially grown on a same surface of a top buffer layer of the substrate
Data Source
AI summary
The disclosure describes various aspects of monolithic integration of different light emitting structures on a same substrate. In an aspect, a device for light generation is described having a substrate with one or more buffer layers made a material that includes GaN. The device also includes light emitting structures, which are epitaxially grown on a same surface of a top buffer layer of the substrate, where each light emitting structure has an active area parallel to the surface and laterally terminated, and where the active area of different light emitting structures is configured to directly generate a different color of light. The device also includes a p-doped layer disposed over the active area of each light emitting structure and made of a p-doped material that includes GaN. The device may be part of a light field display and may be connected to a backplane of the light field display.