Monolithic Optical Receiver Stack for Multi-Wavelength Detection
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Solution Overview
Problem
Existing optical receiver components are limited in their ability to efficiently convert multiple light colors into voltage, leading to suboptimal performance and design inefficiencies, particularly in terms of space and cost.
Innovation Solution
The development of an optical receiver component comprising two types of partial-voltage sources with different absorption edges, connected in series, where each type is monolithically integrated in a stack-like manner with semiconductor diodes and tunnel diodes, allowing for the conversion of various light colors into a cumulative voltage, and featuring a space-saving and cost-effective design.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If multiple separate optical receiver components are used to detect different light colors, then the detection capability for multiple wavelengths is improved, but the device complexity and space requirements increase
Solution Approach 1:
The patent combines multiple semiconductor diodes with different absorption edges into a single monolithic stack structure. The first semiconductor diode detects light with wavelengths shorter than its absorption edge, while the second semiconductor diode detects light with wavelengths shorter than its absorption edge but longer than the first diode's absorption edge. This merging of multiple detection functions into one integrated component resolves the contradiction by achieving multi-wavelength detection capability without increasing device complexity or space requirements.
Solution Approach 2:
The patent segments the detection spectrum into different ranges by using semiconductor diodes with specifically selected absorption edges. The first diode handles the higher energy (shorter wavelength) range, while the second diode handles the lower energy (longer wavelength) range. This segmentation allows each diode to specialize in a particular wavelength range, enabling efficient multi-wavelength detection within a single compact component.
2Device complexity
If a single optical receiver component detects all light colors, then the device complexity is reduced, but the detection precision and efficiency for specific wavelengths deteriorate
Solution Approach 1:
The patent applies local quality by giving each semiconductor diode a specific absorption edge tailored to its intended detection range. The first semiconductor diode is designed with an absorption edge optimized for detecting higher energy photons (shorter wavelengths), while the second semiconductor diode is designed with an absorption edge optimized for detecting lower energy photons (longer wavelengths). This localized optimization of detection characteristics within the single component ensures high detection precision for specific wavelength ranges while maintaining overall device simplicity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enables the efficient conversion of different light colors into a high total voltage, facilitating the control of structural elements like MOSFETs and providing a scalable, compact, and cost-effective multicolor receiver design.
Implementation Method 1
each sub-partial-voltage source comprises a semiconductor diode with a p-n junction, and a tunnel diode is formed between in each case two successive sub-partial-voltage sources
Implementation Method 2
a tunnel diode is formed between in each case two successive sub-partial-voltage sources
Data Source
AI summary
An optical receiver component, wherein the receiver component comprises a first type of partial-voltage source with a first absorption edge and a second type of partial-voltage source with a second absorption edge, and the first absorption edge lies at a higher energy than the second absorption edge. Each partial-voltage source produces a partial voltage, provided a photon flux at a specific wavelength strikes the partial-voltage source, and the two partial-voltage sources are connected in series. A first number of series-connected sub-partial-voltage sources of the first type and a second number of series-connected sub-partial-voltage sources of the second type are provided. The first number and/or the second number are greater than one, and the respective deviation of the source voltages of the sub-partial-voltage sources among themselves is less than 20% in both types. Each sub-partial-voltage source comprises a semiconductor diode with a p-n junction.