Solid-State Devices TRIZ Cases

Cerium oxide composite etch stop prevents stack collapse and residue issues in 3D NAND fabrication by maintaining vertical sidewalls and high aspect ratios.

Laminated conductive layers protect metal surfaces from etching damage in active matrix substrates, suppressing contact resistance increases.

A segmented common electrode structure provides a dedicated repair pathway for open data lines in liquid crystal displays.

A highly refractive polymer optical element reduces sudden refractive index changes at the interface, increasing radiation power emission by up to 16%.

A demount roller with adhesive tape peels ultra-thin semiconductor wafers from temporary carriers.

Column spacers enforce minimum spacing constraints to resolve brightness non-uniformity caused by variable distances between light sources and color layers.

A capacitor lower electrode features a Y-shaped or hollow U-shaped conductive pattern extending into the dielectric layer.

A light conversion layer with conversion filters and a color filter layer on a substrate.

A polarized rectangular laser beam generates a standing wave to guide semiconductor film crystal growth.

A polyurethane polishing pad uses MCDEA curatives and excess isocyanate to achieve high removal rates on thick oxide films.

A segmented gate electrode structure in an oxide semiconductor thin film transistor reduces parasitic capacitance while maintaining high voltage handling capability.

A thin film encapsulation layer integrates a touch sensing structure within an organic light emitting display apparatus.

Single-layer electrode structures minimize display thickness while accelerating touch point calculation speeds.

A plastic organic electroluminescent display device uses a circular polarizer adhered to an optically isotropic barrier film.

High frequency vibration and laser irradiation melt convex sealant portions to flow into concave areas, creating a uniform surface.

A magnetoresistance element uses a segmented voltage path to separate write and read circuits, reducing MTJ resistance.

A light emitting device features a base body recess allowing connection terminals to extend over the cavity for robust soldering.

A surfactant embedded polyacid composite forms the electron injection layer in an OLED device to enhance charge transport efficiency.

Segmented color filters and vertical stacking improve wavelength selectivity while reducing crosstalk in compact image sensors.

A 3D fin structure with a wrapped gate and dielectric layer provides electrical isolation from the bulk silicon substrate.

A MEMS device uses a segmented lid with an intermediate conductive member to electrically connect electrodes while isolating the cavity.

A sealing member pigment absorbs excess blue light from a 400-460 nm LED, resolving incomplete conversion and unintended color extraction in small devices.

A staircase-shaped insulating layer with a higher refractive index redirects oblique light emission toward the normal direction.

Segmented ion implantation with wafer rotation corrects film thickness distribution and surface roughness in bonded wafers.

Removing half tone masks from the manufacturing sequence simplifies the process, reduces costs, and improves yield.

A layout design system generates dummy fin designs to create mandible mask patterns.

Directly contacting a multilayer reflective structure with an absorptive layer eliminates composite resonance modes, stabilizing wavelength response.

A broadband radiation detector uses internal regions with varying refractive indices to enhance noise mitigation across multiple spectral bands.

Reduced graphene oxide spacers prevent inorganic hole conductor degradation, maintaining over 95% efficiency after 400 hours of illumination.

Diffusion features on a lens scatter and diffract light from the converter material, resolving color nonuniformity caused by varying emission angles.

CCD sensors detect alignment keys on mother glass substrates to reduce time-consuming alignment processes and improve manufacturing precision.

Recesses in the flexible substrate narrow the transition area width while maintaining connection reliability for ultra-narrow frames.

Gradient additive distribution in OLED adhesive units suppresses moisture infiltration and prevents substrate delamination caused by volume expansion.

Island-shaped protective layers shield organic light-emitting display pixels from mask imprinting defects and shadow effects during manufacturing.

Silver alloy reflective coatings resist corrosion and thermal cycles, maintaining high reflectivity and extending light emitting diode lifespan.

A semiconductor device integrates a storage capacitor using overlapping source and gate electrodes to increase electrostatic capacitance.

Discrete charge trapping layers at different levels mitigate charge spreading and loss, enabling vertical scaling without increasing fabrication complexity.

Benzotriazole additives neutralize acids in the body and molding part, preventing electrode corrosion and maintaining luminous intensity stability.

Segmented ferroelectric field effect transistors enable high-density synaptic arrays that resolve integration complexity in neuromorphic devices.

Co-optimized p-well and n-well implants form isolated high voltage transistors, eliminating extra processing steps that raise manufacturing costs.

Segmenting the display panel into nested regions reduces device volume while maintaining a large seamless screen area.

Curved surfaces in the overcoat layer refract trapped light beyond total internal reflection limits, improving external luminous efficiency.

A buried rail embedded in an insulation layer connects to source-drain regions via conductive plugs, establishing a stable vertical power network.

A thin film transistor uses a silicon-oxide cross-linked polymer transition layer to prevent interfacial contaminants from degrading electron mobility.

Nanostructures with substructures reduce dislocation density and improve quantum efficiency in optoelectronic semiconductor chips.

Conductive vias in a light-transmissive glass matrix resolve the contradiction between high illumination intensity and reliable electrical conductivity.

A monolithic optical receiver stack converts multiple light colors into a cumulative voltage using series-connected semiconductor diodes with distinct absorption edges.

Recessed array substrate electrodes increase opposing surface area to boost capacitance in display panels.

Hollowed-out areas on the mask plate enable single-step cathode formation, reducing manufacturing time and cost while improving aperture ratio.

A deep low-concentration n-type layer extends the depletion depth of a CMOS photodetector to improve charge collection.