Semiconductor Device With Overlapping Electrode Capacitor
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Solution Overview
Problem
Existing semiconductor devices and flat panel displays face challenges in achieving high electrostatic capacitance while maintaining a compact size, which affects the aperture ratio and resolution of light emitting regions, leading to reduced display quality and lifespan.
Innovation Solution
A semiconductor device is designed with a thin film transistor (TFT) and capacitor integrated on a substrate, where the source electrode overlaps the gate electrode, forming a capacitor that reduces the area occupied by the storage capacitor, allowing for increased electrostatic capacitance without increasing the device size, and is applied in a flat panel display (FPD) to enhance aperture ratio and resolution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a separate storage capacitor is added to increase electrostatic capacitance, then the electrostatic capacitance is improved, but the device area increases
Solution Approach 1:
The patent combines the storage capacitor function with the TFT structure by having the source electrode overlap the gate electrode. This integration allows the storage capacitor to be formed within the existing TFT footprint, increasing electrostatic capacitance without expanding the overall device area.
Solution Approach 2:
The gate electrode serves dual functions: as the control electrode for the TFT and as one electrode for the storage capacitor. This multi-functionality eliminates the need for separate dedicated capacitor electrodes, maximizing space utilization within the device.
2Illumination intensity
If the aperture ratio is increased to improve display quality, then the light emitting area is improved, but the resolution and lifespan are reduced
Solution Approach 1:
By merging the storage capacitor function into the TFT structure through electrode overlapping, the patent reduces the area occupied by capacitor components. This freed-up area can be allocated to increase the aperture ratio while maintaining sufficient space for high-resolution pixel structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The integration of the TFT and capacitor within the semiconductor device minimizes the area occupied by the storage capacitor, enabling high electrostatic capacitance and improved aperture ratio, resulting in enhanced display quality and extended lifespan of the FPD.
Implementation Method 1
The source electrode, the insulating layer, and the gate electrode may overlap each other so as to provide a capacitor
Data Source
AI summary
A semiconductor device includes a semiconductor layer on a substrate, a gate electrode electrically insulated from the semiconductor layer by a gate insulating layer, an insulating layer on the gate insulating layer and on the gate electrode, and a source electrode and a drain electrode on the insulating layer, the source and drain electrode being connected to the semiconductor layer. The source electrode overlaps at least a part of the gate electrode. The source electrode, the insulating layer, and the gate electrode overlap each other so as to provide a capacitor.