MoOx Isolation Buffer Layer for Copper Electrode Adhesion
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Solution Overview
Problem
In liquid crystal display (LCD) technology, copper (Cu) metal electrodes used in thin film transistor (TFT) structures face issues with low adhesion to substrates, easy stripping, and ion diffusion to silicon-based thin films, affecting conduction performance and leading to hillock formation and increased electric resistance.
Innovation Solution
The implementation of a molybdenum oxide (MoOx) isolation buffer layer on the TFT structure's metal electrodes, which enhances adhesion and prevents ion diffusion by filling grain boundaries, thereby improving the structural integrity and performance of the metal electrode layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If copper (Cu) metal is used for metal electrodes to reduce electric resistance, then electric resistance is reduced, but adhesion to substrate deteriorates and metal ions diffuse to silicon-based thin films
Solution Approach 1:
A molybdenum oxide (MoOx) isolation buffer layer is introduced as an intermediary between the copper metal electrode and the substrate/silicon-based thin films. This buffer layer prevents direct contact, thereby stopping copper ion diffusion to silicon layers while maintaining low electric resistance of the copper electrode. The buffer layer acts as a mediator that resolves the conflict between using copper for low resistance and preventing adhesion/diffusion issues.
2Loss of energy
If copper (Cu) metal is used for metal electrodes to reduce electric resistance, then electric resistance is reduced, but metal ions diffuse to silicon-based thin films affecting conduction performance
Solution Approach 1:
The molybdenum oxide isolation buffer layer serves as a protective intermediary that blocks the diffusion path of copper ions to silicon-based thin films. By placing this buffer layer between the copper electrode and the silicon layers, the harmful ion diffusion is prevented while the copper electrode maintains its low electric resistance property.
3Loss of energy
If aluminum (Al) metal is used to reduce electric resistance in larger LCD panels, then electric resistance is reduced, but hillock phenomena occur and aluminum ions diffuse to a-Si layer
Solution Approach 1:
The molybdenum oxide isolation buffer layer acts as a mediator between the aluminum metal electrode and the a-Si layer, preventing aluminum ion diffusion to the semiconductor layer. This buffer layer also helps suppress hillock formation by providing a stable interface, thereby allowing aluminum to be used for low resistance without suffering from its inherent defects.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The MoOx buffer layer effectively increases the adhesion force between metal electrodes and substrates, prevents metal ion diffusion to silicon-based thin films, and reduces electric resistance, enhancing the reliability and performance of TFT structures in LCDs.
Implementation Method 1
effectively preventing metal ions of a metal electrode layer in a TFT structure from diffusing to an active layer such as Si based thin film layer
Implementation Method 2
increasing adhesion force between a metal electrode layer and a substrate
Data Source
AI summary
The embodiments of the present invention disclose an array substrate and manufacturing method thereof, and a display device. The array substrate provided in an embodiment of the present invention comprises: a substrate, and a gate metal layer, an active layer and a source/drain metal layer formed on the substrate; wherein, on at least one side of the gate metal layer, there is formed an isolation buffer layer, and/or, on at least one side of the source/drain metal layer, there is formed an isolation buffer layer; furthermore, the isolation buffer layer is made of molybdenum oxide.