MOS Capacitor Reservoir Design for Area Reduction
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Solution Overview
Problem
Conventional semiconductor apparatuses with reservoir capacitors require increased occupation area due to MOS capacitors being formed in different wells, leading to potential gate damage from high voltages and increased risk of semiconductor failure.
Innovation Solution
A semiconductor apparatus with a reservoir capacitor design where multiple MOS capacitors are serially coupled and formed within the same well, sharing sources, drains, and bulks, allowing for efficient voltage distribution and reduced occupation area.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If MOS capacitors are formed in different wells, then the risk of gate damage is reduced, but the occupation area increases
Solution Approach 1:
The patent merges multiple MOS capacitors into a single shared well structure, where multiple gates are formed over a common well region. This allows the capacitors to share the same substrate area and well formation processes, reducing the total occupation area while maintaining the voltage distribution benefits of multiple serial capacitors.
Solution Approach 2:
The shared well structure serves multiple functions simultaneously: it acts as the substrate for multiple MOS capacitors, provides common electrical connections, and enables voltage distribution across serially coupled capacitors within a unified structure. This multi-functionality reduces the need for separate well formations for each capacitor.
2Power
If high voltage is applied to the reservoir capacitor, then the capacitor can handle higher voltage requirements, but the gate may be damaged
Solution Approach 1:
The patent segments the high voltage stress across multiple MOS capacitors connected in series within the shared well. Each gate experiences only a portion of the total voltage (e.g., Vtotal/n for n capacitors), preventing any single gate from exceeding its breakdown voltage while maintaining the overall high voltage handling capability of the reservoir capacitor.
Solution Approach 2:
The shared well structure acts as an intermediary that distributes and isolates voltage stress from individual gates. By forming multiple gates over the same well with appropriate doping profiles, the well mediates the voltage distribution and protects each gate from direct exposure to the full high voltage.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration reduces the semiconductor apparatus's occupation area and minimizes the risk of gate damage by evenly distributing voltage across MOS capacitors, enhancing the stability and reliability of the semiconductor apparatus.
Implementation Method 1
a reservoir capacitor, wherein the reservoir capacitor includes a plurality of MOS capacitors serially coupled to one another
Data Source
AI summary
A semiconductor apparatus includes a reservoir capacitor, and the reservoir capacitor includes a plurality of MOS capacitors serially coupled to one another. The plurality of MOS capacitors are arranged in one well.