Lateral MOS Power Transistor with Vertical Drift Control Region
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Solution Overview
Problem
There is a need for a lateral MOS power transistor that can be manufactured using a simple and cost-effective process while maintaining low switch-on resistance and high breakdown voltage characteristics, suitable for automotive and industrial electronics.
Innovation Solution
The semiconductor device comprises a transistor with a source region, drain region, body region, drift zone, and gate electrode in a first semiconductor layer, with a drift control region adjacent to the drift zone in a second semiconductor layer, allowing for efficient current flow and high breakdown voltage, and is manufactured by forming these regions in a specific sequence and structure to enable a simple and robust semiconductor device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If lateral MOS power devices are used for integration, then further components can be integrated, but achieving both low switch-on resistance and high breakdown voltage becomes difficult
Solution Approach 1:
The patent introduces a vertical drift control region extending from the surface into the drift region, adding a vertical control dimension to the lateral device structure. This allows independent control of the drift region conductivity without compromising the lateral integration layout, thereby achieving both integration capability and high breakdown voltage characteristic
2Reliability
If TEDFET structure with accumulation effect is used, then power device performance improves, but manufacturing complexity increases
Solution Approach 1:
The drift control region serves multiple functions: it controls the drift region conductivity during operation, enables accumulation effect for low switch-on resistance, and maintains high breakdown voltage. This multi-functionality achieves TEDFET performance without requiring the complex multi-layer TEDFET structure
Solution Approach 2:
Instead of creating accumulation through complex multi-layer structures as in TEDFETs, the patent inverts the approach by using a vertically extending drift control region that directly modulates the drift region conductivity, achieving the same performance effect with simpler manufacturing
3Ease of manufacture
If simple manufacturing process is used, then production cost decreases, but achieving high breakdown voltage and low switch-on resistance simultaneously becomes difficult
Solution Approach 1:
The device is segmented into distinct functional regions: source region, drain region, body region, drift region, and vertically extending drift control region. This segmentation allows each region to be optimized independently for its specific function while being manufactured through standard lateral device processes, achieving both manufacturing simplicity and superior electrical characteristics
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables a semiconductor device with improved conductivity and breakdown voltage characteristics, allowing for efficient current handling and integration into integrated circuits, while being manufactured through a straightforward and economical process.
Implementation Method 1
TEDFETs specifically rely on the effect of accumulation in the drift region of a MOS power transistor
Data Source
AI summary
A semiconductor device includes a transistor. The transistor includes a source region, a drain region, a body region, a drift zone, and a gate electrode being adjacent to the body region. The body region, the drift zone, the source region and the drain region are disposed in a first semiconductor layer having a first main surface. The body region and the drift zone are disposed along a first direction between the source region and the drain region, the first direction being parallel to the first main surface. The transistor further includes a drift control region arranged adjacent to the drift zone, the drift control region being disposed over the first main surface.