MOS Slew Rate Control Circuit With Integrated Capacitance

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Solution Overview

Problem

Semiconductor memory devices face challenges in achieving high data reliability, high speed of memory access, low power consumption, and reduced chip size, particularly in managing the slew rates of various signals such as clock, data, and command/address signals.

Innovation Solution

Incorporation of a slew rate control circuit that utilizes MOS transistors configured in specific configurations to increase capacitance without increasing size, enhancing signal edge delay and reliability, and includes switch circuits for flexible capacitance adjustment.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional slew rate control circuits are used, then signal edge delay can be achieved, but circuit size increases and capacitance is insufficient

Engineering Contradiction:
Improvesignal edge delayVSAvoidcircuit size
Core Design Contradiction:
ReliabilityVSArea of stationary object

Solution Approach 1:

The patent combines the capacitor and switch into a single integrated unit where the capacitor is formed within the switch structure. This merging eliminates the need for separate capacitor components and reduces overall circuit area while maintaining the required capacitance for signal edge delay control.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The capacitor is nested within the switch structure, with the capacitor formed in the off-state region of the switch. This nesting approach allows the capacitor to occupy space that would otherwise be unused, effectively increasing capacitance without increasing the external circuit footprint.

Inventive Principle:
Principle #7Nested doll (Nesting)

2Reliability

If capacitance is increased to improve slew rate control, then signal management reliability improves, but circuit size increases

Engineering Contradiction:
Improveslew rate controlVSAvoidcircuit size
Core Design Contradiction:
ReliabilityVSArea of stationary object

Solution Approach 1:

The patent applies different properties to different parts of the circuit by creating a capacitor with specific characteristics (larger capacitance) in a localized region within the switch structure. This allows high capacitance to be achieved in a small local area without increasing the overall circuit size, improving slew rate control locally where needed.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The capacitor is formed in the vertical dimension within the switch structure rather than requiring additional horizontal space. By utilizing the off-state region and stacking components vertically, the patent achieves increased capacitance without increasing the circuit's planar footprint.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Adaptability or versatility

If switch circuits are added for capacitance adjustment, then flexibility and adaptability improve, but device complexity increases

Engineering Contradiction:
Improvecapacitance adjustment flexibilityVSAvoidcircuit complexity
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The switch circuit serves multiple functions: it acts as a signal switch during operation and simultaneously functions as a capacitor during its off-state. This multi-functionality eliminates the need for separate capacitor components and control circuits, reducing overall device complexity while maintaining capacitance adjustment flexibility.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The switch's off-state region automatically provides capacitance functionality without requiring additional components or control mechanisms. The switch structure itself serves its own capacitance needs, eliminating the requirement for separate capacitance adjustment circuits and reducing overall system complexity.

Inventive Principle:
Principle #25Self-service

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution provides improved slew rate control with increased capacitance and reliability, allowing for efficient signal management without increasing circuit size, thereby supporting high-speed operations with reduced power consumption.

Implementation Method 1

MOS transistors configured in specific configurations to increase capacitance without increasing size

Methodology Applied
Scientific EffectCapacitance: Capacitance

Implementation Method 2

A slew rate control may regulate a falling edge or a rising edge of a signal to, for example, delay the signal or change a duty cycle

Methodology Applied
Scientific EffectRC time constant delay:

Data Source

PatentUS20250274125A1Apparatus including slew rate control circuit
Publication Date: 2025.08.28 MICRON TECHNOLOGY INC
  • US20250274125A1 patent drawing
  • US20250274125A1 patent drawing
  • US20250274125A1 patent drawing

AI summary

Some embodiments of the disclosure provide an apparatus including a logic circuit and a capacitive device. The logic circuit receives a target signal. The capacitive device includes one terminal coupled to a first node on an output side of the logic circuit and another terminal coupled to a second node on an input side of the logic circuit.