MOSFET Conductive Structure and Insulating Layer for RDSON Reduction
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Solution Overview
Problem
In optimizing MOSFET performance, existing device structures and fabrication processes often face trade-offs where improvements in one parameter, such as on-resistance (RDSON), result in degradation of other parameters like breakdown voltage (BVDSS) and increased parasitic capacitance.
Innovation Solution
The implementation of a conductive structure connecting a part of the drain region to an underlying doped region, with an insulating layer between the conductive structure and the semiconductor layer, and within a trench, helps reduce RDSON without significantly decreasing BVDSS, achieved through a specific process involving trench formation, conductive layer deposition, and doping.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If existing device structures and fabrication processes are used to improve on-resistance (RDSON), then RDSON is reduced, but parasitic capacitance increases
Solution Approach 1:
The patent introduces an insulating layer as an intermediary between the first conductive structure and the semiconductor layer. This insulating layer acts as a mediator that reduces parasitic capacitance between the conductive structure and the semiconductor layer, allowing on-resistance to be reduced without the harmful side effect of increased parasitic capacitance
Data Source
AI summary
An electronic device can include a substrate including an underlying doped region and a semiconductor layer overlying the substrate. A trench can have a sidewall and extend at least partly through the semiconductor layer. The electronic device can further include a first conductive structure adjacent to the underlying doped region, an insulating layer, and a second conductive structure within the trench. The insulating layer can be disposed between the first and second conductive structures, and the first conductive structure can be disposed between the insulating layer and the underlying doped region. Processes of forming the electronic device may be performed such that the first conductive structure includes a conductive fill material or a doped region within the semiconductor layer. The first conductive structure can allow the underlying doped region to be farther from the channel region and allow RDSON to be lower for a given BVDSS.