Power MOSFET With Surrounding Gate Conductor for Compact High-Current Design
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Solution Overview
Problem
Conventional power MOSFET devices are large and inefficient due to the need for multiple cells to handle high voltages and currents, making them unsuitable for modern manufacturing requirements.
Innovation Solution
A power MOSFET device design featuring a gate conductor surrounding source and drain pillars, with multiple MOSFET units having different numbers of cells that can be electrically connected in parallel to provide varying current outputs, utilizing a trench-type gate and insulating structure to enhance performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If a large number of power MOS transistor cells are combined to output large currents and operate under high voltage, then the current handling capability and voltage operation are improved, but the device size becomes very large
Solution Approach 1:
The patent transitions from a planar gate structure to a three-dimensional trench gate structure that surrounds the source and drain pillars vertically. This dimensional change allows the gate to control multiple cells more efficiently in the vertical dimension, reducing the horizontal area required for the same current handling capability
Solution Approach 2:
The device is divided into multiple identical or different MOSFET units, each containing a plurality of cells arranged in a grid pattern. These units can be independently designed and then combined in parallel to achieve the desired total current output, allowing flexible scaling without requiring a single large monolithic structure
2Adaptability or versatility
If multiple MOSFET units with different numbers of cells are connected in parallel, then flexible current output is achieved, but the device complexity increases
Solution Approach 1:
The patent designs multiple MOSFET units that can be identical or different in the number of cells they contain. Each unit functions as a modular building block that can be independently configured and then combined in parallel. This universal modular design allows the same basic unit structure to serve multiple current output requirements, reducing design complexity compared to creating entirely different structures for each current level
Solution Approach 2:
The device enables dynamic current output control by selectively activating different combinations of MOSFET units in parallel. Each unit can be independently controlled, allowing the overall device to adapt its current output flexibility without requiring physical reconfiguration, thus managing complexity through operational rather than structural dynamics
Data Source
AI summary
A power MOSFET device includes at least one MOSFET unit disposed over a substrate, wherein the MOSFET unit includes a plurality of cells and a boundary surrounding the cells. In one embodiment of the present invention, the cell is configured to provide a unit current, and comprises at least one source pillar and at least one drain pillar, a gate conductor surrounding the source pillar and the drain pillar, and an insulating structure electrically separating the gate conductor from the source pillar and the drain pillar, wherein the gate conductor extends from the cell to the boundary.