Movable Focus Ring for Plasma Etcher Profile Control
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Solution Overview
Problem
As semiconductor devices undergo miniaturization, the etching processes face challenges in controlling etch rate and achieving desired etch profiles due to tool degradation and variations in feature sizes, which existing technologies struggle to address effectively.
Innovation Solution
A movable focus ring system is integrated into the etching process, allowing for dynamic control of the etch rate by adjusting its vertical position relative to the wafer, thereby influencing the plasma shape and characteristics, such as etch rate, anisotropy, and selectivity, to achieve precise etch profiles and compensate for tool degradation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the minimum feature size is reduced to improve integration density, then more components can be integrated into a given area, but control over etch rate and etch profile becomes more difficult
Solution Approach 1:
The focus ring is made movable rather than fixed, allowing dynamic adjustment of its vertical position during the etching process. This enables real-time control of plasma distribution and etch rate, providing the adaptability needed for miniaturized features while maintaining precise etch profile control
Solution Approach 2:
By changing the vertical position parameter of the focus ring, the plasma density distribution is modified. This parameter adjustment allows optimization of etch rate and profile for different feature sizes, enabling the system to adapt to reduced minimum feature sizes while maintaining manufacturing precision
2Productivity
If the etch rate is increased to improve productivity, then more material can be removed faster, but control over etch profile and anisotropy deteriorates
Solution Approach 1:
The movable focus ring allows dynamic control of plasma density during etching. By adjusting the focus ring position, the system can optimize between etch rate and profile quality in real-time, enabling high productivity while maintaining precise etch profile control and anisotropy
Solution Approach 2:
The system uses endpoint detection and process monitoring to provide feedback on etch progress and profile quality. This feedback enables real-time adjustments of the focus ring position to maintain optimal etch rate while preserving etch profile control
3Ease of operation
If a fixed focus ring design is used to simplify device complexity, then manufacturing and operation are easier, but the system cannot compensate for tool degradation and process variations
Solution Approach 1:
Converting the fixed focus ring to a movable one adds controlled complexity that enables compensation for tool degradation and process variations. The dynamic adjustment capability maintains process consistency and reliability while preserving ease of operation through automated control
Solution Approach 2:
The system incorporates process monitoring and feedback mechanisms that detect variations and tool degradation. This feedback drives automatic adjustments of the focus ring position, maintaining reliable and consistent etching results despite changes in tool condition or process parameters
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables improved control over the etching process, allowing for the production of desired etch profiles and maintaining etch rate consistency by dynamically adjusting the focus ring's position, thereby enhancing the reliability and predictability of the semiconductor manufacturing process.
Implementation Method 1
forming a plasma within the plasma chamber
Data Source
AI summary
A semiconductor manufacturing method and semiconductor manufacturing tool for performing the same are disclosed. The semiconductor manufacturing tool includes a plasma chamber, a mounting platform disposed within the plasma chamber, a focus ring disposed within the plasma chamber, and at least one actuator mechanically coupled to the focus ring and configured to move the focus ring vertically. The actuator is configured to move the focus ring vertically when a plasma is present in the plasma chamber.