Movable Ground Rod for Plasma Processing Apparatus
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Solution Overview
Problem
Conventional plasma processing apparatuses lack the capability to finely control plasma conditions, particularly for batch etching of multi-layered semiconductor structures, which requires precise management of plasma density and ion energy.
Innovation Solution
The apparatus includes a processing chamber with a lower electrode, an upper electrode, high-frequency power sources, a processing gas supply, and a unique ground potential adjustment system using a ring-shaped first and second ground member and a movable ground rod to control the plasma state, allowing for high-density or low-density plasma conditions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a conventional plasma processing apparatus with fixed ground members is used, then the structure is simple, but the plasma control precision is insufficient for batch etching of multi-layered structures
Solution Approach 1:
The patent applies the dynamics principle by making the ground rod movable between the first and second ground members. The ground rod can be positioned to contact either the first ground member (exposed to processing space) or the second ground member (exposed to exhaust space), allowing dynamic adjustment of the plasma ground state. This enables precise control of plasma density and ion energy by changing the electrical connection configuration, directly resolving the contradiction between simple structure and precise plasma control.
2Quantity of substance
If high-frequency power is applied to generate plasma, then plasma density increases, but ion energy control becomes difficult
Solution Approach 1:
The patent applies parameter changes by altering the electrical ground state configuration through the movable ground rod. By switching which ground member (first or second) is contacted by the ground rod, the electrical parameters of the plasma environment change, enabling independent control of plasma density and ion energy. This allows the system to achieve high plasma density while maintaining precise ion energy control, resolving the contradiction between quantity and precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables precise control of plasma density, enhancing etching performance by adjusting the ground state of the electrodes, thereby improving etching rates and selectivity for semiconductor wafers, and accommodating various etching processes within a single chamber.
Implementation Method 1
a high-frequency power source that applies high-frequency power to the lower electrode
Implementation Method 2
a processing gas supply mechanism that supplies a processing gas for generating plasma to the processing space
Data Source
AI summary
A plasma processing apparatus includes: a first ground member provided in processing chamber in such a way that at least a portion of the first ground member is exposed to a processing space, wherein the first ground member forms a ground potential; a second ground member provided in an exhaust space of the processing chamber to face the first ground member in such a way that at least a portion of the second ground member is exposed to the exhaust space, wherein the second ground member forms a ground potential; and a ground rod that moves up and down between the first and second ground members and contacts any one of the first or second ground member to adjust a ground state of the first or second ground member.