Electric Discharge Tubes TRIZ Cases

A movable ground rod adjusts the electrical state of plasma processing electrodes to control plasma density and ion energy.

External plasma reaction part decomposes process gas and supplies it through injection ports at both sides of the ground electrode.

Inverting the thinning direction to the sample backside eliminates ion beam curtaining artifacts while maintaining high image quality.

Supercritical carbon dioxide drying eliminates capillary forces during solvent removal, preserving the structural integrity of low-k dielectric films.

A plasma processing method determines holding sheet contact state before etching to ensure uniform substrate treatment.

An evaporation source uses an external cooling chamber to absorb heat from the target carrier wall via convection.

Offset ring cathode geometry suppresses arcing and minimizes runoff to achieve uniform coating without masking.

Resilient conductive parts clamp a monolithic power transfer system onto sputter endblocks, eliminating carbon brush wear and wet environment corrosion.

A plasma probe processing unit samples measurement signals after a preset mask period from the ascending timing of a pulse signal.

A charged particle beam separator and reflection control electrode switch the electron beam direction using small voltage changes.

Concentric nozzles in this gas injection system minimize shadowing effects on uneven surfaces while maintaining high-purity deposition.

A matchless plasma source adjusts its operating frequency by measuring the magnitude of the sinusoidal current waveform at the amplifier output.

A metal hardmask film forms on a silicon substrate using a season material and barrier layer to prevent fluorine radical diffusion and aluminum contamination.

Selective extraction of relevant layout data isolates error-causing regions, eliminating unnecessary verification time and reducing information leakage risks.

A plasma cleaning method removes silicon oxide films using controlled bias power and pressure settings.

Segmented tapered power electrodes reduce the standing wave effect in capacitively coupled plasma systems, ensuring uniform deposition on large-area substrates.

A remote plasma generator employs a yttrium oxide protection tube to eliminate aluminum anodizing particle contamination.

Visible light arc detection sensors monitor power delivery systems in plasma process chambers to identify arcing events.

A tapered insulative cone with a padding cap blocks sputtered material to prevent cracking and gas leakage in ion beam acceleration systems.

Segmented post cathodes use suspended magnets to control arc positioning, reducing material wastage and simplifying multi-layer coating processes.

Cooling plates in the exhaust stream condense solid by-products, preventing particle deposition on downstream pumps during perfluorocarbon abatement.

Staggered conductor termination zones with equidistant IDC slots break symmetry to reduce alien crosstalk while maintaining impedance.

Helium plasma treatment densifies atomic layer deposited silicon nitride films, reducing wet etch rates at low temperatures.

A ceiling-mounted detector base uses a removable bezel plate and rotatable fixing wings to enable flexible pre-assembly of cabling.

A transparent sample base integrates a detection element to convert charged particle beams into light for simultaneous optical observation.

Rectangular waveguide converts TE11 mode to TE10 mode, resolving incompatibility between semiconductor sources and heating chambers.

Dividing the writing region into blocks and meshes reduces redundant processing data volume, improving throughput in multi charged particle beam writing.

Continuous vacuum processing eliminates batch ventilation delays, ensuring reproducible nanostructures without residual gas fluctuations.

Integrating an electrostatic field detector into the objective lens reduces primary beam aberrations and improves spatial resolution.

Internal coolant channels maintain the showerhead faceplate at a controlled temperature, preventing premature film flaking and reducing cleaning cycles.

Integrated gas distribution assembly merges plates to minimize leakage and ensure uniform flow.

Asymmetric clamping arms reduce the external profile and eliminate special tools, enabling high unshaded solid angles for ion milling.

Segmented nozzles deliver hydrogen fluoride gas to the reaction tube and manifold, removing oxide by-products from the substrate unloading area.

Segmented plasma nitridation converts an initial film into a first nitride layer, preventing oxygen diffusion from the substrate and improving HF resistance.

Paired Helmholtz coils and rear magnets confine electrons to resolve non-uniform plasma distribution, ensuring consistent carbon film thickness.

A spherical air bearing assembly enables four degrees of freedom movement for precise wafer manipulation in high vacuum systems.

Fluorine-based etching modulates operating variables to reduce line edge roughness while maintaining substrate throughput.

A hydrogenated isotopically enriched boron trifluoride dopant gas composition stabilizes ion beams in semiconductor manufacturing.

A charged particle beam writing apparatus uses a magnet coil to deflect the beam and adjust its incident angle on the target surface.

A plasma discharge splitter converts atmospheric nitrogen into fertilizer using low energy inputs.

A plasma system mixes water mist with low-temperature atmospheric-pressure plasma to increase hydroxyl radical content.

Depositing a high-strength compressive film on the substrate bevel cancels mechanical stress, preventing edge particles that damage lithography accuracy.