Multiple-Quantum-Well LED Structure With Lateral Carrier Injection
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Solution Overview
Problem
Conventional GaN-based LED structures require complex phosphor-based methods to produce white light, which complicates the manufacturing process and structure.
Innovation Solution
A semiconductor structure is designed with a P-type semiconductor layer laterally injecting carriers into a multiple-quantum-well structure, allowing for multiple light emitting wavelengths without the need for phosphors, simplifying the manufacturing process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional GaN-based LED manufacturing uses phosphors or color mixing methods to form white LEDs, then white LED functionality is achieved, but the structure and manufacturing process become complex
Solution Approach 1:
The patent transitions from conventional vertical carrier injection to lateral carrier injection through the P-type semiconductor layer. This dimensional change in carrier injection approach enables direct formation of white LEDs with multiple light emitting wavelengths without requiring phosphors or color mixing structures, thereby simplifying both manufacturing process and device structure
Solution Approach 2:
The P-type semiconductor layer serves multiple functions: it provides lateral carrier injection into the active region and enables formation of multiple light emitting wavelengths through the multiple-quantum-well structure. This multi-functionality eliminates the need for separate phosphor components or color mixing mechanisms, reducing overall device complexity
2Productivity
If conventional methods use phosphors or color mixing to create white LEDs, then white light output is achieved, but additional components and processes are required
Solution Approach 1:
The patent merges the functions of multiple components (blue LED chip and phosphor layer) into a single integrated structure where the multiple-quantum-well structure with lateral carrier injection directly generates multiple light emitting wavelengths. This consolidation eliminates additional components and simplifies the manufacturing process
Solution Approach 2:
The invention extracts and eliminates the phosphor component and color mixing mechanisms from the conventional LED structure. By using lateral carrier injection into the multiple-quantum-well structure, the system directly produces white LED output without requiring the extracted phosphor components, thereby reducing component count and manufacturing steps
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The structure enables the production of white LEDs and full-color displays directly, replacing traditional backlight methods, and achieving multiple light emitting wavelengths through lateral carrier injection.
Implementation Method 1
each of the plurality of semiconductor layers of the multiple-quantum-well structure emits light at a different emission wavelength
Data Source
AI summary
The present disclosure provides a semiconductor structure and a method for manufacturing the semiconductor structure. The semiconductor structure includes an N-type semiconductor layer provided on a substrate in a vertical direction, and at least one of multiple-quantum-well structure is formed on the N-type semiconductor layer in a horizontal direction, a P-type semiconductor layer is provided above the multiple-quantum-well structure and on at least part of sides of the multiple-quantum-well structure, each multiple-quantum-well structure includes a plurality of semiconductor layers sequentially stacked in the vertical direction and a multiple-quantum-well unit formed between each two adjacent semiconductor layers of the plurality of semiconductor layers, and the P-type semiconductor layer is in contact with each of the plurality of semiconductor layers of the multiple-quantum-well structure in the vertical direction. The method is used to manufacture the semiconductor structure.