MRAM Current Re-routing via Bitline Sharing
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Solution Overview
Problem
Magnetic random access memories (MRAMs) face high programming current consumption, which is a challenge for battery-powered on-board applications, as they require significant current to induce magnetic fields for writing data.
Innovation Solution
The method involves routing current from a digitline to a bitline at the intersection of a magnetoresistive memory element, allowing the magnetic fields to be shared, thereby reducing total power consumption by eliminating the need for separate digitline and bitline currents.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If separate digitline and bitline currents are used for programming, then reliable data writing is achieved, but high current consumption occurs
Solution Approach 1:
The patent merges the digitline and bitline current paths by routing the digitline current through the bitline via a switching element. This combining of current paths eliminates the need for separate digitline and bitline currents, reducing total current consumption from approximately 8 mA to 4 mA while maintaining reliable data writing through the magnetoresistive memory element
Solution Approach 2:
The bitline is given multi-functionality by serving both as a bitline for selected memory elements and as a current path for digitline current. The switching element enables the bitline to universally handle both data write operations and current routing functions, allowing one current source to perform what previously required two separate current sources
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces current consumption by approximately 4 mA during programming, making it more suitable for energy-efficient applications, such as battery-powered on-board memories.
Implementation Method 1
The GMR effect and the TMR or Magnetic Tunnel Junction (MTJ) or Spin Dependent Tunneling (SDT) effect provide possibilities to realize a.o. non-volatile magnetic memories
Implementation Method 2
The GMR effect and the TMR or Magnetic Tunnel Junction (MTJ) or Spin Dependent Tunneling (SDT) effect provide possibilities to realize a.o. non-volatile magnetic memories
Implementation Method 3
providing current through a first and a second conductive strip, which first and second strips cross each other at the memory element, wherein the current through the first conductive strip is temporarily routed through the second conductive strip, thus generating two magnetic fields with different directions at the memory element
Data Source
AI summary
The present invention provides a method and device for programming a magnetic random access memory element with reduced current consumption, by re-routing digitline current through a selected bitline in a selected direction.