Magnetic Random Access Memory Cell Area Reduction via Parallel Source Line
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Solution Overview
Problem
The existing magnetic random access memory cells are not suitable for advanced semiconductor manufacturing processes due to their large size and limited process window, which hinders their integration and performance in shrinking semiconductor technology nodes.
Innovation Solution
A magnetic random access memory cell design where the word line structure and gate structure are formed in the same layer, allowing for a larger process window and sufficient space for device formation, and the source line structure extends parallel to the substrate to reduce the cell's size and area, improving integration and performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If the existing magnetic random access memory cell structure is used, then the device can be formed with conventional processes, but the cell size is large and not suitable for advanced semiconductor manufacturing processes
Solution Approach 1:
The source line structure is repositioned from a vertical configuration to a horizontal configuration that extends along the first direction parallel to the substrate surface. This dimensional change allows the source line to be located in the dielectric structure rather than occupying vertical space, thereby reducing the memory cell area while maintaining electrical connectivity to the source region.
Solution Approach 2:
The word line structure and gate structure are merged into the same layer, with the sidewall of the word line structure contacting the sidewall of the gate structure. This merging reduces the overall cell area by eliminating redundant structural layers and improving spatial efficiency, making the device suitable for advanced semiconductor manufacturing processes.
2Manufacturing precision
If the word line structure and gate structure are formed in different layers, then the device can be formed with conventional processes, but the process window is limited and device isolation is insufficient
Solution Approach 1:
The word line structure and gate structure are formed in the same layer, creating a merged configuration where the sidewall of the word line structure contacts the sidewall of the gate structure. This merging simplifies the manufacturing process by reducing the number of layer formation steps, thereby enlarging the process window and improving device isolation.
3Productivity
If the source line structure extends perpendicular to the substrate, then the device can be formed with conventional processes, but the cell area is large and integration degree is low
Solution Approach 1:
The source line structure is repositioned from a vertical configuration to a horizontal configuration that extends along the first direction parallel to the substrate surface. This dimensional change allows the source line to be located in the dielectric structure, reducing the memory cell area and improving integration degree while maintaining ease of manufacture through conventional semiconductor fabrication processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enhances the integration degree of magnetic random access memory cells by reducing their size and area, providing a larger process window and better isolation, thus improving the performance and compatibility with advanced semiconductor manufacturing processes.
Implementation Method 1
The magnetic random access memory integrates a magneto-resistive device and a silicon-based selection matrix
Data Source
AI summary
A magnetic random access memory cell and a method for forming a magnetic random access memory are provided. The memory cell includes a substrate including a plurality of active regions and a plurality of isolation regions each between adjacent active regions. The memory cell also includes a gate structure over each active region, and a word line structure over each isolation region. In addition, the memory cell includes a source region and a drain region in the substrate on both sides of the gate structure, and a dielectric structure over the substrate. The gate structure and the word line structure are located in the dielectric structure. Further, the memory cell includes a source line structure located in the dielectric structure and electrically connected to the source region over each active region. The word line structure, the gate structure, and the source line structure are parallel to each other.