Solid-State Devices TRIZ Cases

Selective removal of sacrificial metal layers creates voids for dielectric filling, resolving high aspect ratio etching challenges in 3D NAND fabrication.

An intermediary substrate stabilizes ultrasonic pad bonding, preventing slip phenomena and ensuring contact reliability.

A polymer adjustment layer aligns the neutral stress plane with metal signal lines in flexible displays.

Segmented dam walls with variable widths prevent lateral water and oxygen erosion while maintaining manufacturing precision.

A barrier metal layer isolates linear and pad electrodes in semiconductor light emitting devices to prevent component migration.

Segmented metal nitride barriers prevent element diffusion while maintaining layer adhesion in 3D memory devices.

A cadmium telluride radiation detection element employs a tellurium oxide intermediate layer to prevent current leakage between closely spaced electrodes.

High-k layers shield spacers from over-etching damage, preventing spacer divots that cause short circuits and inconsistent metal gate stack heights.

A stacked photoelectric conversion device uses a shadow mask method to fabricate an organic layer on an inorganic substrate.

Sulfur-containing electroplating deposits copper wires with controlled taper angles, eliminating voids and shorts that damage active channels.

Plasmonic photonic crystal electrode suppresses surface plasmon polariton absorption to boost OLED light extraction efficiency.

Nanoimprinted resist troughs define nanowire structures, enabling reliable signal demultiplexing beyond photolithography limits.

A light-emitting element uses a buffer layer with an uneven pattern to conformally form conductive and light-emitting structures.

A composite organic material system adjusts hole and electron balance within the emission layer to enhance luminous efficiency.

Segmenting the contact interface through openings in the second protection layer disperses tensile forces and reduces peeling effects during bending.

Extensive metal electrodes replace underfill to support LED layers during laser lift-off, eliminating thermal stress and reducing manufacturing time.

Quantum dot and fluorescent small molecule composites narrow emission bands to resolve broad spectra and infrared loss in organic light emitting diodes.

Etched backside vias in APD arrays reduce optical crosstalk by reflecting stray photons, extending spectral response while maintaining mechanical support.

A second electrode incorporates a compensation layer with varying material composition to prevent shorts between cathode and anode.

A correlated electron switch storage array transitions between conductive and insulative states using quantum mechanical phenomena.

A polysilicon thin film transistor substrate uses curved insulating layers to increase contact areas between adjacent components.

A hafnium oxide ferroelectric tunnel junction structure manages oxygen content through metal nitride layers to enhance device endurance.

A three-dimensional memory device replaces a carrier substrate with a source layer directly on vertical semiconductor channels.

A proximity sensor uses a lens with an encapsulation bleed stop groove to prevent resin overflow during overmolding.

Segmented wirings with an insulation layer preserve signal continuity when cutting the panel, avoiding new mask costs.

Lithium-doped zinc oxide replaces rare metals in the TFT channel layer, lowering material costs while maintaining electrical performance.

A variable wavelength interference filter uses a penetration hole and sealant to maintain internal reduced pressure.

Varying intermediate layer thickness across RGB sub-pixels improves luminous efficiency and color purity in organic light-emitting displays.

A semiconductor memory cell design shares source regions among adjacent cells to reduce the required layout area.

An alumina reducing gas barrier layer shields the capacitor from oxygen deficit, enhancing thermal separation and detection sensitivity.

Conductor layer shields organic semiconductor from electromagnetic interference and moisture, preventing leakage current.

Multi-layer resist merging reduces mask count and production costs while improving defect-free rates.

Inclined trench reflection collects light while stacked photodiodes reduce signal noise from ion implantation.

Parallel silicon solar cells form an integrated structure to increase light absorption at the junction, reducing photon loss through front electrodes.

A semiconductor capacitor above the floating diffusion node maintains required capacitance while minimizing incident light impact on the node.

A light reflecting structure directs emission from adjacent semiconductor diodes through a single output section.

Segmented common electrode lines connect via offset conductive paths to prevent short-circuits at color resist openings.

A fingerprint recognition substrate uses light transmission holes in inter-pixel regions to optically couple reflected light to a photosensor.

Segmented tunnel barrier layers in MRAM devices achieve uniform resistivity through alternating RF sputtering deposition.

A multi-layered organic EL display panel combines resin and inorganic insulating layers to prevent moisture penetration during manufacturing.

An X-ray detector uses an intermediary electrode to connect source and data lines, minimizing electrical noise in the signal path.

Embedded high refractive index sections diffract incident light into distinct orders, enabling higher pixel density without absorptive color filters.

Recessed regions in the insulating film position the blocking mask to prevent foreign object interference and ensure accurate organic EL film deposition.

A vertically stacked pixel structure merges red, green, and blue sub-pixels onto a single substrate to simplify the transfer process.

A capping layer with alternating refractive patterns redirects light from organic emission layers toward color filters.

A display apparatus uses an intermediate member to align a camera module within a cover hole.

Segmenting functional layers with composite materials resolves the tradeoff between optical absorption and power conversion efficiency in thin-film solar cells.

A flexible LED device uses patterned silicon microcolumns filled with soft polymer resin to maintain semiconductor properties while achieving mechanical flexibility.

A hole transport layer, light-emitting layer, and electron transport layer confine excitons through specific energy level differences.

A magnetic random access memory cell design repositions the source line structure parallel to the substrate surface to reduce device footprint.