Organic Thin Film Transistor Electromagnetic Shielding
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Solution Overview
Problem
Conventional organic thin film transistors face challenges in maintaining stability due to exposure to oxygen and moisture, and they lack effective electromagnetic protection, which can lead to malfunction and integration difficulties.
Innovation Solution
An organic thin film transistor structure is developed with a conductor layer on top of the organic semiconductor layer, acting as both an electromagnetic shield and a protective layer against oxygen and moisture, while preventing short circuits and stabilizing electrical potential, suitable for integration without additional wiring or contacts.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If the organic semiconductor layer is exposed to the atmosphere, then the fabrication process is simple, but the transistor characteristics deteriorate due to oxygen and moisture
Solution Approach 1:
The patent applies a thin film conductor layer (such as aluminum, silver, or copper) deposited directly onto the organic semiconductor layer. This thin film serves as both a protective barrier against oxygen and moisture while maintaining fabrication simplicity through direct deposition without requiring complex encapsulation structures.
Solution Approach 2:
The patent creates a composite structure by combining the organic semiconductor layer with a conductor layer. This composite structure provides both the semiconductor functionality and the protective barrier properties, eliminating the need for separate protective encapsulation layers.
2Reliability
If a protective film is formed on the organic semiconductor layer, then protection against oxygen and moisture is improved, but electromagnetic protection is not provided
Solution Approach 1:
The patent makes the conductor layer perform multiple functions simultaneously: it serves as a protective barrier against oxygen and moisture, provides electromagnetic shielding by blocking external electromagnetic fields, and acts as an electrode contact. This multi-functionality eliminates the need for separate protective and shielding layers.
Solution Approach 2:
The conductor layer creates a composite structure that combines protective and electromagnetic shielding properties. The metallic nature of the conductor layer provides both physical barrier protection and electromagnetic interference shielding in a single integrated layer.
3Object-affected harmful factors
If metal sealing cans are used for electromagnetic protection, then electromagnetic shielding is improved, but integration becomes difficult due to additional wiring requirements
Solution Approach 1:
The patent merges the electromagnetic shielding function with the existing transistor electrode structure. The conductor layer is integrated directly into the transistor fabrication process and serves as both the protective/shielding layer and the electrical contact, eliminating the need for separate metal sealing cans and additional wiring.
Solution Approach 2:
The conductor layer performs multiple functions: electromagnetic shielding, protective barrier, and electrical contact. This multi-functionality simplifies the overall device structure and reduces integration complexity compared to separate shielding components.
4Object-affected harmful factors
If a conductor layer is placed on the organic semiconductor layer, then electromagnetic protection and protection against oxygen and moisture are improved, but parasitic capacitance may increase
Solution Approach 1:
The patent controls the thickness and material properties of the conductor layer to optimize the balance between protective/shielding performance and parasitic capacitance. By adjusting these parameters, the design minimizes energy loss while maintaining effective protection.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides stable characteristics by protecting against oxygen, moisture, and electromagnetic interference, preventing leakage current and maintaining a high ON/OFF ratio, thus enhancing the reliability and integration capabilities of the transistor.
Implementation Method 1
a conductor layer placed on the organic semiconductor layer... acting as both an electromagnetic shield and a protective layer
Implementation Method 2
protective layer against oxygen and moisture... intercept from the atmosphere by forming a protective film
Data Source
AI summary
An organic thin film transistor including: a substrate; a gate electrode placed on the substrate; a gate insulating film placed on the gate electrode; a source electrode and a drain electrode which are placed on the gate insulating film; an organic semiconductor layer placed on the gate insulating film between the source electrode and the drain electrode; a hole transport layer placed on the organic semiconductor layer; an electron transport layer placed on the hole transport layer; and a conductor layer placed on the electron transport layer; the organic thin film transistor which characteristics are stable by being protected from oxygen or moisture and being protected electromagnetically and which is suitable for integration.