Magnetic Random Access Memory Film Alignment via Orthogonal Fields
Solution Overview
Problem
Magnetic Random Access Memory (MRAM) devices face challenges in reducing power consumption and increasing reliability due to increased sensitivity to noise and manufacturing process variations as feature sizes decrease, necessitating more effective fabrication techniques.
Innovation Solution
A method and apparatus for aligning magnetic films during deposition by applying orthogonal magnetic fields to substrates with easy axes, ensuring that deposited magnetic material is aligned with these axes, thereby enhancing the Tunnel Magnetoresistant Ratio (TMR) and reducing power consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If feature size is reduced to decrease power consumption, then power consumption decreases, but sensitivity to noise and manufacturing process variations increases
Solution Approach 1:
The patent changes the magnetic field application parameters during deposition, using orthogonal magnetic fields to align magnetic moments in the deposited layer. This parameter change in the fabrication process improves the magnetic anisotropy and reduces sensitivity to variations, thereby improving reliability while maintaining small feature sizes
Solution Approach 2:
The patent applies magnetic fields during the deposition process itself, rather than after deposition. This preliminary action ensures that the magnetic moments are aligned correctly as the material is being deposited, which improves the final magnetic properties and reduces sensitivity to subsequent manufacturing variations
2Ease of manufacture
If magnetic material is deposited without aligned magnetic fields, then deposition process is simpler, but magnetic orientation alignment is poor
Solution Approach 1:
The patent segments the magnetic field application into two orthogonal components during deposition. By applying magnetic fields along two perpendicular directions simultaneously, the method achieves precise control over the magnetic orientation without requiring complex post-deposition processing, thus maintaining ease of manufacture while improving alignment precision
Solution Approach 2:
The patent uses orthogonal magnetic fields as an intermediary during deposition to control the magnetic orientation. These magnetic fields act as a mediator that guides the alignment of magnetic moments during the deposition process itself, achieving precise magnetic orientation without complicating the overall manufacturing process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The approach results in MRAM devices with lower power consumption and higher MTJ density, as the aligned magnetic material improves the transition between states, allowing for more definitive data storage with reduced current requirements.
Implementation Method 1
applying a first magnetic field during a deposition of a first magnetic material onto a substrate and applying a second magnetic field along a second direction in the region concurrently during the deposition onto the substrate
Data Source
AI summary
A system and method to fabricate magnetic random access memory is disclosed. In a particular embodiment, a method of aligning a magnetic film during deposition is disclosed. The method includes applying a first magnetic field along a first direction in a region in which a substrate resides during a deposition of a first magnetic material onto the substrate. The method further includes applying a second magnetic field along a second direction in the region during the deposition of the first magnetic material onto the substrate.