MRAM-Inductor Stack Layout for Lower-Cost On-Chip RF Integration

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Solution Overview

Problem

Current MRAMs are not integrated with inductors for RF applications, leading to increased costs due to off-chip assembly, which can be addressed by integrating MRAMs and inductors on a single chip.

Innovation Solution

A structure and method for integrating MRAM and inductor on a single chip, involving a dielectric layer with memory and inductor regions, where a magnetic core is disposed below a dielectric layer, and metal lines form an inductor coil surrounding the core, with specific distances and connections to reduce thickness.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If MRAMs and inductors are integrated on a single chip, then manufacturing cost is reduced and integration is improved, but device structure becomes more complex

Engineering Contradiction:
Improvemanufacturing costVSAvoiddevice structure
Core Design Contradiction:
Ease of manufactureVSDevice complexity

Solution Approach 1:

The device is divided into distinct memory regions and inductor regions within the same chip, with separate dielectric layers and metal line configurations for each function. This segmentation allows independent optimization of each component while maintaining integration benefits.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent utilizes vertical stacking with multiple dielectric layers and metal lines at different heights to accommodate both MRAM and inductor structures in three-dimensional space. This dimensional approach reduces planar footprint while maintaining functional separation.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Device complexity

If off-chip inductors are assembled with MRAMs through circuit boards, then device structure remains simple, but manufacturing cost increases

Engineering Contradiction:
Improvedevice structureVSAvoidmanufacturing cost
Core Design Contradiction:
Device complexityVSEase of manufacture

Solution Approach 1:

The patent combines MRAM and inductor fabrication into a single integrated process flow, using the same substrate, dielectric layers, and metal deposition steps for both components. This merging eliminates separate assembly operations and reduces overall manufacturing complexity.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The dielectric layers and metal interconnection structures serve dual purposes: they provide electrical connections for MRAM cells while simultaneously forming the inductor coils and magnetic core structures. This multi-functionality reduces the total number of manufacturing steps required.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The integration reduces the overall thickness and cost by eliminating the need for off-chip inductors, enhancing integration and reducing assembly costs.

Implementation Method 1

A magnetic core is disposed below the second dielectric layer and covers the second metal lines, wherein material of the magnetic core is the same as material of the MRAM

Methodology Applied
Scientific EffectMagnetism: Magnetism

Data Source

PatentUS20260007076A1Structure with MRAM and inductor and fabricating method of the same
Publication Date: 2026.01.01 UNITED MICROELECTRONICS CORP
  • US20260007076A1 patent drawing
  • US20260007076A1 patent drawing
  • US20260007076A1 patent drawing

AI summary

A structure with an MRAM and an inductor includes a first dielectric layer. A second dielectric layer covers the first dielectric layer. Numerous second metal lines are embedded in the first dielectric layer. An MRAM is disposed between the second dielectric layer and the first dielectric layer. A magnetic core is disposed below the second dielectric layer and covers the second metal lines. The distance from the topmost surface of the magnetic core to the first dielectric layer is smaller than the distance from the topmost surface of the MRAM to the first dielectric layer. Numerous fourth metal lines are embedded in the second dielectric layer and disposed on the magnetic core. The fourth metal lines and the second metal lines are electrically connected through numerous first conductive plugs. The second metal lines, the fourth metal lines and the first conductive plugs form an inductor coil surrounding the magnetic core.