MRAM Layer Structure for Compact Low-Power Magnetic Sensing
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Solution Overview
Problem
Existing magnetic field sensor technologies, such as AMR and GMR sensors, face issues with high chip area, high cost, high power consumption, limited sensitivity, and susceptibility to temperature variations.
Innovation Solution
A magnetic random access memory (MRAM) structure is developed with a specific layered configuration including a substrate, dielectric layers, conductive vias, bottom and top electrode layers, a spin orbit coupling layer, and protective and spacer layers, utilizing materials like silicon nitride and tungsten to enhance performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If magnetic field sensor technologies (AMR, GMR, MTJ sensors) are used, then sensing capability is provided, but chip area is large and cost is high
Solution Approach 1:
The patent combines multiple functional layers (spin orbit coupling layer, magnetic tunneling junction element, protective layers, spacer layers) into a single integrated MRAM structure that serves both as memory and sensor, eliminating the need for separate sensor components and reducing overall chip area
Solution Approach 2:
The MRAM structure is designed to perform multiple functions including data storage, magnetic field sensing, and signal detection within a single device architecture, allowing it to replace dedicated sensor components and reduce chip real estate requirements
2Measurement precision
If magnetic field sensor technologies (AMR, GMR, MTJ sensors) are used, then sensing capability is provided, but power consumption is high
Solution Approach 1:
The patent utilizes changes in magnetic resistance parameters of the MTJ element in response to magnetic field variations, enabling detection through resistance measurement rather than continuous power-consuming operations, thus reducing overall power consumption while maintaining sensing capability
3Measurement precision
If magnetic field sensor technologies (AMR, GMR, MTJ sensors) are used, then sensing capability is provided, but sensitivity is limited and temperature susceptibility is high
Solution Approach 1:
The patent employs composite material structures including spin orbit coupling layers, magnetic tunneling junction elements, and multiple protective layers with different material properties that work together to enhance temperature stability and sensing sensitivity simultaneously
Solution Approach 2:
The protective layers and spacer layers are designed beforehand to shield the sensitive magnetic components from temperature variations and environmental factors, cushioning against thermal effects before they can degrade sensing performance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The MRAM structure reduces chip area, lowers power consumption, and improves sensitivity while being less affected by temperature variations, offering an improved alternative to existing sensors.
Implementation Method 1
a spin orbit coupling layer disposed on the bottom electrode layer
Implementation Method 2
the characterization of utilizing GMR materials to generate different resistance under different magnetized states
Data Source
AI summary
A magnetic random access memory structure includes a first dielectric layer; a bottom electrode layer disposed on the first dielectric layer; a spin orbit coupling layer disposed on the bottom electrode layer; a magnetic tunneling junction (MTJ) element disposed on the spin orbit coupling layer; a top electrode layer disposed on the MTJ element; a protective layer surrounding the MTJ element and the top electrode layer, and the protective layer masking the spin orbit coupling layer; a mask layer surrounding the protective layer; and a spacer layer surrounding the mask layer and the protective layer.