MRAM MTJ Interconnect Layout for Lower Power and Smaller Chip Area
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Solution Overview
Problem
Existing magnetoresistive random access memory (MRAM) devices face issues such as high chip area, high cost, high power consumption, limited sensitivity, and susceptibility to temperature variations.
Innovation Solution
A method for fabricating MRAM devices involving the formation of a magnetic tunneling junction (MTJ) with a first metal interconnection extending from the MRAM region to a logic region, where the metal interconnections on both regions have different heights, and utilizing materials like copper for the metal layers and silicon oxide for the inter-metal dielectric layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If conventional magnetic field sensor technologies (AMR, GMR, MTJ sensors) are used, then magnetic field sensing function is achieved, but chip area is large and cost is high
Solution Approach 1:
The patent combines MRAM storage functionality with magnetic field sensing capability into a single integrated device. The same MTJ structure serves dual purposes: data storage and magnetic field detection, eliminating the need for separate sensor components and reducing overall chip area while maintaining sensing performance.
Solution Approach 2:
The MRAM device is designed to perform multiple functions - both data storage and magnetic field sensing. The magnetoresistive effect is utilized for both read/write operations in MRAM and for detecting external magnetic fields, making the device universal and reducing the need for dedicated sensor structures.
2Use of energy by moving object
If conventional magnetic field sensor technologies are used, then magnetic field sensing function is achieved, but power consumption is high
Solution Approach 1:
The MRAM device utilizes its inherent magnetoresistive properties to detect magnetic fields without requiring additional power-intensive sensing circuits. The change in resistance due to external magnetic fields is directly measured, leveraging the device's natural physical properties rather than requiring active sensing mechanisms.
3Temperature
If conventional magnetic field sensor technologies are used, then magnetic field sensing function is achieved, but temperature stability is poor
Solution Approach 1:
The patent employs compensation techniques that monitor and adjust for temperature-induced resistance changes in the MTJ structure. By tracking temperature variations and compensating for their effect on resistance measurements, the device maintains accurate magnetic field sensing across varying temperature conditions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution reduces chip area, lowers power consumption, and enhances sensitivity while maintaining data retention even when disconnected from an electrical source.
Implementation Method 1
forming a first magnetic tunneling junction (MTJ) on the MRAM region
Implementation Method 2
forming a first inter-metal dielectric (IMD) layer around the first MTJ
Data Source
AI summary
A method for fabricating a semiconductor device includes the steps of providing a substrate comprising a magnetic random access memory (MRAM) region and a logic region, forming a first magnetic tunneling junction (MTJ) on the MRAM region, forming a first inter-metal dielectric (IMD) layer around the first MTJ, and then forming a first metal interconnection extending from the MRAM region to the logic region on the first MTJ. Preferably, the first metal interconnection on the MRAM region and the first metal interconnection on the logic region have different heights.