MRAM MTJ Stack With Magnetic Field Element for Faster P-to-AP Switching
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Solution Overview
Problem
The switching efficiency of magnetoresistive random-access memory (MRAM) cells, particularly in P-to-AP switching, is limited by incubation delays and asymmetry due to restricted initial torque of the free layer's magnetization, which affects write latency and switching speed.
Innovation Solution
Incorporating a magnetic field induced element, such as Fe/Co-based alloy, adjacent to the MTJ structure to enhance the initial angle of the free layer's magnetization, thereby increasing the initial torque and improving P-to-AP switching speed without requiring additional current, thus mitigating switching asymmetry.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a conventional MTJ structure is used for MRAM, then the device structure is simple and manufacturing is easier, but the switching efficiency is limited due to restricted initial torque of the free layer's magnetization
Solution Approach 1:
A magnetic field induced element is introduced as an intermediary component between the control line and the MTJ stack. This element generates a magnetic field that enhances the initial torque on the free layer's magnetization, thereby improving switching efficiency without requiring changes to the fundamental MTJ structure. The magnetic field induced element acts as a mediator that amplifies the effect of the write current.
Solution Approach 2:
The invention changes the magnetic field parameters by introducing a magnetic field induced element that generates an enhanced magnetic field in the x-direction. This parameter change increases the initial torque on the free layer's magnetization, enabling faster and more efficient P-to-AP switching. The magnetic field strength and direction are optimized to maximize switching performance.
2Speed
If additional current is applied to improve switching speed, then the switching asymmetry is reduced, but the energy consumption increases
Solution Approach 1:
The invention replaces the purely electrical mechanism (increasing current) with a magnetic field-based mechanism. By introducing a magnetic field induced element, the system uses magnetic field enhancement rather than simply increasing current to improve switching speed. This substitution reduces energy consumption while achieving the desired switching performance.
Solution Approach 2:
The magnetic field induced element is positioned and configured in advance to generate the optimal magnetic field before the write operation occurs. This preliminary arrangement of the magnetic field ensures that the free layer's magnetization receives the necessary initial torque immediately when the write current is applied, reducing switching latency without requiring excessive current.
3Loss of time
If the initial torque of the free layer's magnetization is restricted, then the device structure remains simple, but the write latency increases
Solution Approach 1:
A magnetic field induced element is introduced as an intermediary component between the control line and the MTJ stack. This element generates a magnetic field that enhances the initial torque on the free layer's magnetization, thereby improving switching efficiency without requiring changes to the fundamental MTJ structure. The magnetic field induced element acts as a mediator that amplifies the effect of the write current.
Solution Approach 2:
The invention changes the magnetic field parameters by introducing a magnetic field induced element that generates an enhanced magnetic field in the x-direction. This parameter change increases the initial torque on the free layer's magnetization, enabling faster and more efficient P-to-AP switching. The magnetic field strength and direction are optimized to maximize switching performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The integration of a magnetic field induced element enhances P-to-AP switching speed and reduces switching latency, leading to improved switching efficiency and reduced critical current asymmetry in MRAM devices.
Implementation Method 1
Incorporating a magnetic field induced element, such as Fe/Co-based alloy, adjacent to the MTJ structure to enhance the initial angle of the free layer's magnetization
Implementation Method 2
enhance the initial angle of the free layer's magnetization, thereby increasing the initial torque
Implementation Method 3
The switching efficiency of magnetoresistive random-access memory (MRAM) cells, particularly in P-to-AP switching
Implementation Method 4
magnetoresistive random access memory (MRAM) is an emerging technology for next generation embedded memory devices
Data Source
AI summary
A method of forming a memory device including forming a bottom electrode via (BEVA) in a dielectric layer, forming a magnetic tunnel junction (MTJ) multilayer structure over the BEVA, forming a top electrode on the MTJ multilayer structure, patterning the MTJ multilayer structure using the top electrode as an etch mask to form a MTJ stack, forming a first interlayer dielectric (ILD) layer over the MTJ stack, and after forming the first ILD layer, forming a ferromagnetic metal that exerts a magnetic field on the MTJ stack.