MRAM Shield Magnetic Body for External Field Protection
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Solution Overview
Problem
Conventional magnetoresistive random access memory (MRAM) is susceptible to data damage and erroneous operations due to external magnetic fields, which can lead to reliability issues during writing and data storage.
Innovation Solution
Incorporating a magnetic field detecting section to identify external magnetic fields and generate a shielding magnetic field to prevent interference, along with a reference cell writing section for data recovery and a shield magnetic body to physically shield the memory cells from external influences.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-generated harmful factors
If a laminated ferri structure is used as the free layer to prevent magnetic field generation, then magnetic field interference is reduced, but the memory becomes susceptible to external magnetic fields affecting data integrity
Solution Approach 1:
A shield magnetic body is introduced as an intermediary component between the external environment and the memory cell. This shield magnetic body includes a shield free layer and shield reference layer that generate a shielding magnetic field to counteract external magnetic fields, thereby protecting the data storage layer from magnetic interference while maintaining the laminated ferri structure's benefits
Solution Approach 2:
The patent applies preliminary anti-action by pre-establishing a shielding magnetic field using the shield magnetic body before external magnetic fields can corrupt the data. The shield reference layer is configured with specific magnetization orientation to proactively counteract potential external magnetic field interference, preventing data integrity issues before they occur
2Reliability
If magnetic field detection and shielding mechanisms are added to protect against external fields, then data integrity is improved, but device complexity increases
Solution Approach 1:
The shield magnetic body is merged with the existing memory cell structure, sharing common layers such as the tunnel insulating layer and anti-ferromagnetic layer. The shield reference layer is formed adjacent to the storage free layer, allowing both the data storage function and magnetic shielding function to be integrated within a unified structure, reducing overall device complexity
Solution Approach 2:
The shield magnetic body serves multiple functions: it acts as a magnetic shield to protect against external fields, provides a reference magnetic field for detection, and maintains structural integrity with the memory cell. The laminated ferri structure in the shield portion serves both as a magnetic barrier and as part of the overall memory device architecture
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution effectively prevents data destruction and erroneous operations by stopping sensitive operations when external magnetic fields are detected and generating a shielding field to protect the MRAM, ensuring data integrity and reliability.
Implementation Method 1
designed to generate a shielding magnetic field to counteract external magnetic fields
Implementation Method 2
Each of the plurality of magnetic memory cells includes a magnetoresistive element containing a laminated ferri structure as a free layer
Data Source
AI summary
An MRAM is provided with a memory main body (2) having at least one cell array, and a magnetic field detecting section (4) which detects a magnetic field in the vicinity of the memory main body (2) and outputs the detection signal to the memory main body (2). In the cell array, a memory main body (2), which has a plurality of magnetic memory cells including a multilayer ferri-structure as a free layer, stops a prescribed operation of the memory main body (2), based on the detection signal.