Magnetic Tunnel Junction Barrier Layer for Annealing-Stable Anisotropy
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Solution Overview
Problem
The processing of magnetic tunnel junction elements leads to diffusion of constituent elements between the hard mask film and the magnetic tunnel junction film during annealing, causing deterioration of perpendicular magnetic anisotropy.
Innovation Solution
A non-magnetic insertion layer is introduced between the hard mask film and the protection layers to prevent diffusion of Ti and N from the hard mask film into the magnetic tunnel junction film, using materials like Ta to suppress unwanted interlayer diffusion and maintain perpendicular magnetic anisotropy.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If annealing treatment is performed to process the magnetic tunnel junction element, then the element can be processed into a prescribed junction size and shape, but diffusion of constituent elements occurs between the hard mask film and the magnetic tunnel junction film, causing deterioration of perpendicular magnetic anisotropy
Solution Approach 1:
A non-magnetic insertion layer is introduced between the hard mask film and the magnetic tunnel junction film to act as a diffusion barrier. This intermediary layer prevents direct contact and interlayer diffusion between Ti/N in the hard mask film and the magnetic tunnel junction film, thereby maintaining perpendicular magnetic anisotropy while allowing annealing treatment to proceed for achieving prescribed junction size and shape.
2Reliability
If the thickness of the magnetic layer of the recording layer is increased to obtain high thermal stability index, then thermal stability is improved, but MgO protection layer near the electrode deteriorates during annealing and processing treatment
Solution Approach 1:
The non-magnetic insertion layer serves as a protective barrier between the hard mask film and the MgO protection layer during annealing and processing treatment. This intermediary structure prevents direct harmful interactions while allowing the magnetic layer thickness to be increased for achieving high thermal stability index without compromising the MgO protection layer integrity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively suppresses unnecessary interlayer diffusion, maintains the integrity of perpendicular magnetic anisotropy, and enhances the controllability of the processing shape of the magnetic tunnel junction film.
Implementation Method 1
diffusion of constituent elements is caused between the hard mask film, and the magnetic tunnel junction film and the protection layer by the annealing treatment
Implementation Method 2
laminating a magnetic tunnel junction film including a reference layer, a tunnel barrier layer, and a recording layer, then, if required, laminating thereabove a protection layer of MgO, CoFeB, or the like, laminating thereabove a hard mask layer of TiN or the like, and performing annealing treatment
Data Source
AI summary
Provided are a magnetic tunnel junction dement suppressing diffusion and penetration of constituent elements between a hard mask film, and a magnetic tunnel junction film and a protection layer, and a method for manufacturing the magnetic tunnel junction element.The magnetic tunnel junction element has a configuration in which a non-magnetic insertion layer (7) including Ta or the like is inserted beneath a hard mask layer (8).