Magnetic Tunnel Junction Sidewall Layer for Lower MRAM On-Resistance
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Solution Overview
Problem
Existing semiconductor manufacturing technologies for MRAMs result in poor performance of magnetic tunnel junctions due to high on-resistance, which affects the efficiency of data storage and retrieval in magnetic random-access memory.
Innovation Solution
A semiconductor structure with a magnetic tunnel junction that includes a sidewall tunneling layer made of materials like boron nitride, magnesium oxide, or aluminum oxide, which reduces on-resistance by allowing spinning electrons to tunnel through, improving the performance of the semiconductor structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If existing magnetic tunnel junction fabrication technologies are used, then the manufacturing process is simple, but the on-resistance is high and performance is poor
Solution Approach 1:
The magnetic tunnel junction is segmented into distinct functional layers including bottom electromagnetic structure, insulating layer, and top electromagnetic structure. Additionally, a sidewall tunneling layer is added as a separate component to provide alternative electron transport path, effectively dividing the current transport function between vertical tunneling through the insulating layer and lateral tunneling through the sidewall layer, thereby reducing overall resistance while maintaining structural organization
Solution Approach 2:
The sidewall tunneling layer acts as an intermediary structure that provides an additional electron transport pathway between the bottom and top electromagnetic structures. This lateral tunneling path mediates the electron transport process, offering an alternative to vertical tunneling through the high-resistance insulating layer, thus reducing overall on-resistance without compromising the magnetic tunneling function
2Reliability
If the insulating layer thickness is reduced to lower resistance, then electron tunneling improves, but magnetic isolation between layers deteriorates
Solution Approach 1:
The invention transitions from purely vertical electron transport through the insulating layer to include lateral electron transport through the sidewall tunneling layer. By adding this dimensional alternative, electrons can tunnel through the sidewall layer without requiring reduction of the vertical insulating layer thickness, thus maintaining magnetic isolation while improving tunneling efficiency through the extended three-dimensional transport path
Solution Approach 2:
The sidewall tunneling layer serves multiple functions simultaneously: it provides an alternative electron transport pathway to reduce resistance, maintains the magnetic isolation function of the insulating layer by not requiring its thinning, and contributes to the overall structural stability of the magnetic tunnel junction. This multi-functionality resolves the contradiction between tunneling efficiency and magnetic isolation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The implementation of a sidewall tunneling layer enhances electron tunneling between the bottom and top electromagnetic structures, thereby reducing on-resistance and improving the overall performance of the semiconductor structure by facilitating efficient data storage and retrieval in MRAMs.
Implementation Method 1
a sidewall tunneling layer on sidewall surfaces of the magnetic tunnel junction... allowing spinning electrons to tunnel through, improving the performance of the semiconductor structure
Data Source
AI summary
Semiconductor structure and fabrication method are provided. The semiconductor structure includes: a substrate and a magnetic tunnel junction on the substrate. The magnetic tunnel junction includes: a bottom electromagnetic structure on the substrate, an insulating layer on the bottom electromagnetic structure, and a top electromagnetic structure on the insulating layer. The semiconductor structure further includes a sidewall tunneling layer on sidewall surfaces of the magnetic tunnel junction.