MTJ Sidewall Layer for Spike Current Diversion in MRAM
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Solution Overview
Problem
Magnetic random-access memory (MRAM) devices face issues with degradation of the tunnel barrier layer and erroneous writes due to high currents flowing through the magnetic tunnel junction (MTJ) element.
Innovation Solution
A magnetic device with a side wall layer composed of a composite material, including substances like silicon oxide, zirconium oxide, and tellurium, which exhibits Poole-Frenkel conduction, diverting a portion of the high current away from the tunnel barrier layer during spike currents, thereby reducing degradation and erroneous writes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If high current is applied to the MTJ element for write operations, then write capability is achieved, but tunnel barrier layer degradation occurs
Solution Approach 1:
A side wall layer is introduced as an intermediary structure between the MTJ element and the surrounding environment. This side wall layer selectively conducts spike currents away from the tunnel barrier layer while preventing gradual degradation, acting as a mediator that protects the vulnerable tunnel barrier layer during high-current write operations
Solution Approach 2:
The side wall layer is positioned specifically at the side walls of the MTJ element structure, providing localized protection only where needed. The layer has different conductive properties than the main MTJ element, allowing it to selectively handle spike currents while leaving normal read/write operations unaffected
2Productivity
If high current flows through the MTJ element, then write operation is performed, but erroneous writes occur
Solution Approach 1:
The side wall layer converts the harmful spike current that causes erroneous writes into a beneficial protective mechanism. By providing an alternative conduction path for spike currents, the side wall layer transforms what would be destructive current into a protected operation, preventing erroneous writes while maintaining normal write capability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composite side wall layer effectively reduces tunnel barrier layer degradation and erroneous writes by allowing spike currents to flow through it, maintaining normal read and write operations without impairing the tunnel barrier layer.
Implementation Method 1
The side wall layer comprises at least one first substance selected from a group consisting of silicon oxide, zirconium oxide, aluminum oxide, aluminum nitride, and silicon nitride, and at least one second substance selected from a group consisting of arsenic, tellurium, antimony, bismuth, and germanium
Data Source
AI summary
According to one embodiment, a magnetic device includes a layered body with a first magnetic layer, a second magnetic layer, and a first non-magnetic layer between the first magnetic body and the second magnetic body. A side wall layer covers at least a side wall of the first non-magnetic body of the layered body and includes at least one first substance chosen from silicon oxide, zirconium oxide, aluminum oxide, aluminum nitride, and silicon nitride, and at least one second substance chosen from arsenic, tellurium, antimony, bismuth, and germanium.