MTJ Memory Cell Transition Layer for High-Temperature Interface Stability

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Solution Overview

Problem

The degradation of Magnetic Tunnel Junction (MTJ) performance due to interface diffusion and interface contact defects in high temperature manufacturing processes affects the reliability of magnetic memory cells.

Innovation Solution

A magnetic memory cell structure is proposed, featuring a transition combination layer comprising alternately stacked boron supply and adsorption buffer layers, which form a stable alloy with strong perpendicular magnetic anisotropy, reducing interface diffusion and enhancing magnetic stability and breakdown voltage.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If high temperature manufacturing process is used, then manufacturing efficiency is improved, but interface diffusion occurs causing performance degradation

Engineering Contradiction:

Improvemanufacturing efficiencyVSAvoidMTJ performance

Core Design Contradiction:

ProductivityVSReliability

Solution Approach 1:

A transition combination layer is introduced between the metal electrode and the MTJ thin film. This intermediate layer prevents direct contact and diffusion between the metal electrode elements and the MTJ layers during high temperature manufacturing processes, while still allowing for effective electrical connection and stress management.

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The transition combination layer is composed of multiple sub-layers with different materials properties, including boron supply layers, boron adsorption buffer layers, and stress control layers. This composite structure simultaneously addresses diffusion prevention, stress management, and electrical connectivity requirements.

Inventive Principle:

Principle #40Composite materials

2Reliability

If metal electrode is used as growth matrix, then electrical connection is improved, but lattice mismatch causes defects and stress

Engineering Contradiction:

Improveelectrical connectionVSAvoidinterface quality

Core Design Contradiction:

ReliabilityVSManufacturing precision

Solution Approach 1:

The transition combination layer serves as an intermediary between the metal electrode and the MTJ thin film, eliminating direct lattice contact. This prevents lattice mismatch-induced defects while maintaining electrical connectivity through the conductive boron-containing layers.

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

Different sub-layers within the transition combination layer have different material compositions and properties optimized for specific functions: boron supply layers for diffusion prevention, boron adsorption buffer layers for interface quality, and stress control layers for stress management.

Inventive Principle:

Principle #3Local quality

3Reliability

If interface diffusion is prevented, then MTJ performance is improved, but manufacturing complexity increases

Engineering Contradiction:

ImproveMTJ performanceVSAvoidlayer structure

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The transition combination layer uses a composite structure of multiple thin sub-layers, each with specific thicknesses and material compositions. This composite approach achieves effective diffusion prevention and stress control while keeping each individual layer thin and manageable.

Inventive Principle:

Principle #40Composite materials

Solution Approach 2:

The invention optimizes specific parameters such as layer thicknesses (ranging from sub-nanometer to few nanometers), boron concentration gradients, and material compositions to achieve the desired performance while controlling the overall complexity of the structure.

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively slows down interface diffusion, improves high temperature performance, and increases breakdown voltage by forming a stable alloy with strong perpendicular magnetic anisotropy, thereby enhancing the quality and reliability of magnetic memory cells.

Implementation Method 1

In a high temperature environment, boron diffusion and adsorption occur between the boron supply layer and the boron adsorption buffer layer

Methodology Applied

Scientific EffectDiffusion: Diffusion

Implementation Method 2

forming a stable alloy with strong perpendicular magnetic anisotropy

Methodology Applied

Scientific EffectPerpendicular magnetic anisotropy: Anisotropy

Implementation Method 3

boron adsorption buffer layer... In a high temperature environment, boron diffusion and adsorption occur between the boron supply layer and the boron adsorption buffer layer

Methodology Applied

Scientific EffectAdsorption: Adsorption

Data Source

PatentUS20240331753A1Magnetic Memory Cell and Magnetic Memory

Publication Date: 2024.10.03 ZHEJIANG HIKSTOR TECHOGY CO LTD

AI summary

Disclosed are a magnetic memory cell and a magnetic memory. The magnetic memory cell sequentially includes a first electrode, a transition combination layer, a Magnetic Tunnel Junction (MTJ), and a second electrode from bottom to top. The first electrode and the second electrode are used to connect to an external circuit, and used to control a resistance state of the MTJ. The transition combination layer includes at least one boron supply layer and at least one boron adsorption buffer layer that are stacked.