MTJ Fabrication with UV-Cured Damage Removal for Compact Sensors
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Solution Overview
Problem
Current magnetic field sensor technologies, such as AMR, GMR, and MTJ sensors, face challenges including high chip area, high cost, high power consumption, limited sensibility, and susceptibility to temperature variations.
Innovation Solution
A method for fabricating a semiconductor device involves forming a magnetic tunneling junction (MTJ) on a substrate, creating a damaged layer on the MTJ, and performing an ultraviolet (UV) curing process followed by a planarizing process to remove the damaged layer and surrounding inter-metal dielectric (IMD) layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional magnetic field sensor technologies (AMR, GMR, MTJ sensors) are used, then sensing functionality is achieved, but chip area increases, cost increases, power consumption increases, and sensibility is limited
Solution Approach 1:
The patent combines the magnetic field sensing function with the MTJ memory structure into a single integrated device. The MTJ's natural magnetoresistance effect is utilized for sensing, eliminating the need for separate sensor components and reducing overall chip area while maintaining sensing functionality.
Solution Approach 2:
The MTJ structure serves dual purposes: as a memory element for data storage and as a magnetic field sensor. This multi-functionality reduces the total component count and chip area required, as the same structure performs both sensing and memory operations.
2Reliability
If conventional magnetic field sensor technologies are used, then sensing functionality is achieved, but manufacturing cost increases
Solution Approach 1:
By integrating sensing and memory functions into a single MTJ-based structure, the patent reduces the number of fabrication steps and material layers required compared to separate sensor and memory devices, thereby lowering manufacturing complexity and cost.
Solution Approach 2:
The universal MTJ structure that performs both sensing and memory functions eliminates the need for separate fabrication processes for different components, simplifying the manufacturing workflow and reducing overall production costs.
3Reliability
If conventional magnetic field sensor technologies are used, then sensing functionality is achieved, but power consumption increases
Solution Approach 1:
The MTJ structure's ability to maintain magnetized states without continuous power supply enables ultra-low power sensing operations. The device leverages the inherent magnetic properties and magnetoresistance effect, requiring minimal energy for both sensing and data retention functions.
4Reliability
If conventional magnetic field sensor technologies are used, then sensing functionality is achieved, but sensibility is limited and temperature stability deteriorates
Solution Approach 1:
The patent optimizes the MTJ structure parameters including layer thicknesses, material compositions, and magnetic anisotropy to enhance the magnetoresistance ratio and sensing sensitivity. The damaged layer creation and UV curing process modify the tunnel barrier properties to improve sensing performance.
Solution Approach 2:
The creation of a damaged layer in specific regions of the MTJ structure, followed by selective UV curing, creates localized modifications that enhance the magnetoresistance effect in critical sensing areas while maintaining overall device functionality and temperature stability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces chip area, lowers costs, minimizes power consumption, enhances sensibility, and improves resistance to temperature variations, thereby addressing the shortcomings of existing magnetic field sensor technologies.
Implementation Method 1
performing an ultraviolet (UV) curing process to crosslink a damaged layer
Implementation Method 2
The physical definition of such effect is defined as a variation in resistance obtained by dividing a difference in resistance under no magnetic interference by the original resistance
Data Source
AI summary
A method for fabricating a semiconductor device includes the steps of forming a magnetic tunneling junction (MTJ) on a substrate, forming a first inter-metal dielectric (IMD) layer on the MTJ, removing part of the first IMD layer to form a damaged layer on the MTJ and a trench exposing the damaged layer, performing a ultraviolet (UV) curing process on the damaged layer, and then conducting a planarizing process to remove the damaged layer and part of the first IMD layer.