Multi-Deck Memory Programming with Boost-by-Deck Disturb Control
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Solution Overview
Problem
Existing programming algorithms for multi-deck memory devices fail to account for program disturb effects when programming memory cells in one deck while preserving the state of previously programmed cells in another deck, leading to reliability issues and performance penalties.
Innovation Solution
Implementing a boost-by-deck technique that applies a higher voltage to unselected decks during a seeding phase and electrically disconnects them during an inhibit phase to mitigate program disturb effects, ensuring reliable programming across multiple decks.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If programming algorithms are applied to multi-deck memory devices without deck-specific voltage adjustments, then programming speed is maintained, but program disturb effects occur in unselected decks leading to reliability degradation
Solution Approach 1:
The memory device is divided into multiple decks (first deck and second deck) that can be independently controlled. During programming operations, each deck can receive different voltage levels - the selected deck receives full programming voltage while unselected decks receive reduced or zero voltage, preventing program disturb effects in unselected decks while maintaining programming speed in the selected deck.
Solution Approach 2:
Different voltage conditions are applied to different decks based on their selection status. The selected deck receives high voltage for effective programming, while unselected decks receive low or zero voltage to prevent disturbance. This localized voltage control ensures that each deck operates under optimal conditions for its specific function.
2Productivity
If higher voltages are applied during programming to improve programming speed, then productivity increases, but program disturb effects in unselected decks increase causing reliability to deteriorate
Solution Approach 1:
The memory device is divided into multiple decks (first deck and second deck) that can be independently controlled. During programming operations, each deck can receive different voltage levels - the selected deck receives full programming voltage while unselected decks receive reduced or zero voltage, preventing program disturb effects in unselected decks while maintaining programming speed in the selected deck.
Solution Approach 2:
Different voltage conditions are applied to different decks based on their selection status. The selected deck receives high voltage for effective programming, while unselected decks receive low or zero voltage to prevent disturbance. This localized voltage control ensures that each deck operates under optimal conditions for its specific function.
3Reliability
If existing programming algorithms are used without deck-specific optimizations, then device complexity is minimized, but program disturb effects cause reliability penalties
Solution Approach 1:
The memory device is divided into multiple decks (first deck and second deck) that can be independently controlled. During programming operations, each deck can receive different voltage levels - the selected deck receives full programming voltage while unselected decks receive reduced or zero voltage, preventing program disturb effects in unselected decks while maintaining programming speed in the selected deck.
Solution Approach 2:
The programming algorithm dynamically changes voltage parameters based on deck selection status. When programming the first deck, the second deck receives zero or reduced voltage, and vice versa. This parameter adjustment resolves program disturb effects without requiring fundamentally new programming approaches, only modified voltage control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The boost-by-deck technique enhances memory device reliability by reducing program disturb effects and improving performance, particularly when programming cells in a top deck while maintaining the state of cells in a bottom deck.
Implementation Method 1
causing a first voltage to be applied to a first plurality of wordlines of the memory array during a program operation. The first plurality of wordlines can be associated with a bottom deck of the memory array, and the second plurality of wordlines can be associated with a top deck of the memory array
Data Source
AI summary
Control logic in a memory device initiates a program operation on a memory array comprising a top deck and bottom deck. During a seeding phase of the program operation, the control logic causes a first positive voltage to be applied to a first plurality of wordlines of the memory array, wherein the first plurality of wordlines is associated with memory cells in the bottom deck of the memory array that are in a programmed state, and causes a ground voltage to be applied to a second plurality of wordlines of the memory array, wherein the second plurality of wordlines is associated with memory cells in the top deck of the memory array. At an end of the seeding phase of the program operation, the control logic electrically separates the top deck from the bottom deck and causes a program voltage to be applied to a selected wordline of the memory array during an inhibit phase of the program operation, wherein the selected wordline is associated with respective memory cells in the top deck of the memory array.