Multi-Dielectric Capacitor Structure for High Capacitance, Low Leakage
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Solution Overview
Problem
The challenge is to minimize the decrease in capacitance while reducing leakage current in capacitors used in integrated circuit devices, where the available space is decreasing and leakage current is a concern.
Innovation Solution
A capacitor design featuring a series of dielectric films with varying conductances, where the capacitance converges to that of the film with the smallest conductance, utilizing materials with high dielectric constants and thin thicknesses, and inclusion of insertion films to manage leakage and physical properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If a dielectric material with high dielectric constant is used to increase capacitance, then capacitance is improved, but leakage current increases
Solution Approach 1:
The dielectric layer is divided into multiple sub-layers (first dielectric layer, second dielectric layer, third dielectric layer) with different dielectric constants and thicknesses. This segmentation allows each layer to contribute differently to capacitance and leakage current characteristics, achieving high capacitance while blocking leakage current through the combined structure.
Solution Approach 2:
The patent uses a composite dielectric structure combining materials with different properties (high-k material for capacitance, low-k material for leakage blocking) in a multi-layer configuration. This composite approach enables simultaneous achievement of high capacitance and low leakage current by leveraging the complementary strengths of different materials.
2Quantity of substance
If the thickness of dielectric films is reduced to increase capacitance, then capacitance is improved, but leakage current increases
Solution Approach 1:
Instead of using a single thin dielectric layer which would have high leakage, the patent segments the thin dielectric into multiple ultra-thin sub-layers separated by insertion films. The total thickness remains small for high capacitance, while the insertion films between sub-layers block leakage current paths that would exist in a single continuous thin layer.
Solution Approach 2:
Insertion films are introduced as intermediary layers between the dielectric sub-layers. These insertion films act as mediators that prevent direct contact between dielectric layers, thereby blocking leakage current paths while maintaining the overall thin structure needed for high capacitance.
3Object-generated harmful factors
If multiple dielectric films with different conductances are used, then leakage current blocking is improved, but device complexity increases
Solution Approach 1:
Different regions of the dielectric structure are assigned different local qualities: the first dielectric layer has high dielectric constant for capacitance, the second dielectric layer has low dielectric constant for leakage blocking, and insertion films are placed at specific locations where leakage current paths are most critical. This local differentiation achieves effective leakage blocking without requiring complete restructuring of the entire device.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design achieves high capacitance and effective leakage current blocking, with the capacitance being significantly influenced by the dielectric film with the smallest conductance, enhancing the overall performance of the capacitor.
Implementation Method 1
a plurality of dielectric films on the first electrode in a sequential series, the plurality of dielectric layers having different conductances from each other
Implementation Method 2
the capacitor has a capacitance which converges to a capacitance of one of the plurality of dielectric films
Implementation Method 3
a plurality of dielectric films on the first electrode in a sequential series
Data Source
AI summary
Provided are a capacitor and a semiconductor device including the capacitor. The capacitor includes a first electrode; a plurality of dielectric films on the first electrode in a sequential series, the plurality of dielectric layers having different conductances from each other; and a second electrode on the plurality of dielectric films, wherein the capacitor has a capacitance which converges to a capacitance of one of the plurality of dielectric films.