Multi-Emitter Display Structure for High-Density Color Integration
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Solution Overview
Problem
Current techniques for producing small, high-density multi-color light-emitting diodes (LEDs) are cumbersome, time-consuming, and costly, making it difficult to achieve efficient and effective design and fabrication for large numbers of LEDs, especially for sophisticated display architectures like light field and micro-displays.
Innovation Solution
The use of facet-dependent epitaxial growth in selective area growth (SAG) allows for the monolithic integration of multiple color LEDs on a single substrate by controlling the growth of quantum wells within defined recesses and apertures, enabling the formation of LEDs that emit different colors in a single or limited epitaxy steps, thereby suppressing unwanted emission and achieving high density arrays.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional techniques are used to produce small multi-color LEDs, then individual LEDs can be fabricated, but the process becomes cumbersome, time-consuming, and costly when producing large numbers of high-density LEDs
Solution Approach 1:
The patent merges multiple quantum well structures with different emission spectra into a single monolithic LED device. Multiple active regions (first active region with first emission spectrum, second active region with second emission spectrum) are integrated within one LED structure, allowing simultaneous production of multiple colors from a single device rather than requiring separate fabrication processes for each color LED.
Solution Approach 2:
The LED structure is designed to perform multiple functions within a single device. The same LED structure can emit multiple colors (first color from first active region, second color from second active region), making it a multi-functional light source that replaces what would traditionally require multiple separate LEDs.
2Quantity of substance
If the number of light emitting elements is increased to provide better user experience, then display quality improves, but design and manufacturing become more challenging
Solution Approach 1:
By combining multiple color-emitting active regions into a single LED device, the patent reduces the total number of discrete components needed. Instead of manufacturing and assembling multiple separate LEDs to achieve multi-color functionality, the invention creates one integrated device that provides the same function, simplifying the manufacturing process for high-density displays.
3Manufacturing precision
If small LEDs are used to increase density, then display resolution improves, but effective techniques for making small multi-color LEDs in large numbers are not widely available
Solution Approach 1:
The patent segments the active region into multiple distinct sections (first active region, second active region) within a single LED structure. Each segment has its own quantum well configuration tailored to emit a specific color. This segmentation allows precise control over the emission characteristics of each region while maintaining a compact single-device structure suitable for high-density applications.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the efficient and cost-effective production of high-density multi-color LED arrays on a single substrate, improving the density and performance of displays by allowing for the precise control of quantum well growth and emission spectra, facilitating the creation of high-resolution, high-density displays.
Implementation Method 1
The second emitter includes an upper active QW region, a second lower active QW region, and a barrier layer between the second lower active QW region and the upper active QW region for suppressing emission of the second lower active QW region
Data Source
AI summary
A display device includes a substrate includes a first emitter and a second emitter thereon. The first emitter includes a first lower active quantum well (QW) region that has a first emission spectrum spanning a first spectral range. The second emitter includes (i) an upper active QW region that has a second emission spectrum spanning a second spectral range that is distinct from the first spectral range, (ii) a second lower active QW region having the first emission spectrum and being located between the upper active QW region and the substrate, and (iii) a barrier layer between the second lower active QW region and the upper active QW region for suppressing emission of the second lower active QW region.