Multi-Finger Gate Layout for Heat-Dissipating Semiconductor Devices
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Solution Overview
Problem
High-power, high-frequency semiconductor devices used in 5G mobile communication systems face challenges with heat generation due to Joule heat, leading to increased electrical resistance and reduced device characteristics, particularly in dense channel structures, where traditional zigzag or V-shaped finger arrangements create dead spaces that limit circuit layout flexibility and increase size.
Innovation Solution
A semiconductor device with a multi-finger structure where gate electrodes are arranged at predetermined intervals in a specific pattern, eliminating heat concentration near the gate electrode at Xn/2 without generating dead space, thus allowing for heat dissipation while maintaining circuit layout flexibility and preventing size increases.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If the array of fingers is made into a zigzag or V-shape to suppress heat concentration, then heat generation is suppressed, but dead space is generated which reduces circuit layout freedom and increases device size
Solution Approach 1:
The patent applies asymmetry by arranging gate electrodes in a non-uniform pattern along the channel direction. Specifically, gate electrodes are positioned with varying intervals - closer together at the input end and farther apart at the output end - creating an asymmetric distribution that directs heat flow toward the input end while eliminating dead space regions, thus resolving the contradiction between heat suppression and compact layout
2Temperature
If the array of fingers is made into a zigzag or V-shape to suppress heat concentration, then heat generation is suppressed, but the degree of freedom of circuit layout is reduced
Solution Approach 1:
The asymmetric gate electrode arrangement allows heat to be directed toward the input end while maintaining a linear, space-efficient layout that preserves circuit design flexibility. This asymmetric positioning avoids the dead space creation inherent in symmetric zigzag or V-shaped configurations, thereby maintaining adaptability for various circuit layouts
3Area of stationary object
If gate electrodes are arranged with Xi=Xi+1 and Xn-X1=0 (conventional arrangement), then device size is minimized, but heat concentration occurs in the vicinity of the gate electrode at Xn/2
Solution Approach 1:
The patent introduces asymmetry in gate electrode positioning where intervals between adjacent gates vary along the channel - specifically, smaller intervals at the input end and larger intervals at the output end. This asymmetric distribution creates a heat flow gradient that directs thermal energy toward the cooler input region, eliminating the heat concentration peak at the center while maintaining compact device dimensions
4Productivity
If channels are made dense to increase device capacity, then device functionality is improved, but heat generation concentration increases leading to temperature rise
Solution Approach 1:
By implementing asymmetric gate spacing in dense multi-finger configurations, the patent creates directional heat flow paths that channel thermal energy toward the input end where cooling is more effective. This allows dense channel packing for high capacity while the asymmetric arrangement prevents thermal runaway by distributing heat generation across the structure with controlled gradients
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This arrangement effectively reduces heat concentration and maximum temperature, maintaining device performance without compromising circuit layout flexibility or increasing size, as demonstrated by simulations showing improved heat dissipation and reduced temperature distributions.
Implementation Method 1
the high output, high-frequency semiconductor devices have problems of heat generation due to Joule heat
Data Source
AI summary
A semiconductor device according to one embodiment the disclosure includes multiple transistors coupled in parallel to each other. Each of the transistors includes a gate electrode, a source electrode, and a drain electrode that extend in a first direction. The plurality of gate electrodes provided one by one to each of the transistors are arranged at a predetermined interval in a second direction crossing the first direction such that the following expressions (1) and (2) are satisfied:Xi≤Xi+1 (1)X1<Xn (2)where Xi represents a center position coordinate of an i-th gate electrode of the gate electrodes in the first direction, Xi+1 represents a center position coordinate of an i+1th gate electrode of the gate electrodes in the first direction, and n represents number of the gate electrodes.