Multi-Mode Resistive Memory Cell for Area Reduction

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Solution Overview

Problem

The miniaturization of semiconductor devices is hindered by the need for separate space for volatile and non-volatile storage elements, which limits their compactness and increases manufacturing costs.

Innovation Solution

A semiconductor device that utilizes a single data storage element capable of operating in multiple modes, including resistance-based and charge-based storage, controlled by a controller to manage voltage and current, allowing for data retention and access speed optimization across different modes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If separate volatile and non-volatile storage elements are provided, then both data processing speed and data retention capability are improved, but device area increases making miniaturization difficult

Engineering Contradiction:
Improvestorage functionalityVSAvoiddevice area
Core Design Contradiction:
Adaptability or versatilityVSArea of stationary object

Solution Approach 1:

The data storage element is designed to function in multiple modes: a first mode for volatile storage (fast data processing) and a second mode for non-volatile storage (persistent data retention). By switching between these modes, a single element replaces what would traditionally require separate volatile and non-volatile storage elements, thereby reducing device area while maintaining both functionality types

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The invention dynamically switches the operational mode of the data storage element based on requirements. The element can transition between volatile and non-volatile modes, allowing the system to adapt its storage characteristics (speed vs. retention) as needed, rather than requiring fixed separate elements for each function

Inventive Principle:
Principle #15Dynamics

2Area of stationary object

If a data storage element operates in multiple modes, then device miniaturization is achieved, but control complexity increases

Engineering Contradiction:
Improvedevice areaVSAvoidcontrol complexity
Core Design Contradiction:
Area of stationary objectVSDevice complexity

Solution Approach 1:

The invention controls the operational mode by changing electrical parameters (voltage levels, pulse durations) applied to the data storage element. By using distinct voltage thresholds and timing parameters for the first and second modes, the system manages complexity through well-defined parameter sets rather than requiring complex control logic

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

A controller acts as an intermediary between the external system and the data storage element, managing the mode switching and parameter adjustment. This intermediary handles the complexity of multi-mode operation, presenting a simplified interface to the rest of the system while coordinating the detailed control of voltage and timing parameters

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enables miniaturization and cost reduction by allowing a single data storage element to function like multiple elements, enhancing data retention and access speed through mode selection, thereby improving the device's performance and efficiency.

Implementation Method 1

a first mode that stores data by a resistance value of a variable resistance

Methodology Applied
Scientific EffectVariable resistance: Electrical Resistance

Implementation Method 2

a second mode that stores data by an amount of electrical charges stored in an electrode

Methodology Applied
Scientific EffectElectrical charge storage: Capacitance

Data Source

PatentUS7835172B2System and method of operation for resistive change memory
Publication Date: 2010.11.16 MONTEREY RESEARCH LLC
  • US7835172B2 patent drawing
  • US7835172B2 patent drawing
  • US7835172B2 patent drawing

AI summary

The present invention provides a semiconductor device and a method for manufacturing thereof. The semiconductor device includes a data storage element which includes a variable resistance and an electrode, and a controller which selects a first mode that stores data by the resistance value of the variable resistance and a second mode that stores data by the amount of electrical charges stored in the electrode. By selectively using the data storage element in the first mode and the second mode, a plurality of storage modes can be implemented with a single data storage element. Thus, miniaturization and cost reduction of the semiconductor device can be achieved.