Multi-Oxide Capacitor Dielectric Structure for Leakage Suppression
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Solution Overview
Problem
As electronic devices are miniaturized, the thickness of dielectric layers in capacitors decreases, leading to increased leakage current, which can hinder device operation.
Innovation Solution
An electrical device with a dielectric layer comprising three metal oxide areas, including a first, second, and third metal oxide area with specific dielectric constants and compositions, where the third area contains boron and other metal elements, arranged in a sequential thickness direction to reduce leakage current while maintaining high capacitance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the thickness of dielectric layer is decreased to downscale electrical devices, then the size of electrical devices decreases, but leakage current increases greatly
Solution Approach 1:
The dielectric layer is segmented into multiple distinct layers: a first dielectric layer (20-50 nm thick) with high dielectric constant (40-70) adjacent to the lower electrode, and a second dielectric layer (10-30 nm thick) with lower dielectric constant (5-20) adjacent to the upper electrode. This segmentation allows each layer to perform specialized functions - the first layer provides high capacitance while the second layer suppresses leakage current at the electrode interface.
Solution Approach 2:
Different regions of the dielectric structure are assigned different material compositions and properties. The first dielectric layer uses high-k material (such as HfO2, HfSiO, HfSiON) to maximize capacitance in the bulk region, while the second dielectric layer uses low-k material (such as SiO2, SiON) to minimize leakage at the critical electrode interface region. This local differentiation of material quality optimizes both capacitance and leakage performance.
2Productivity
If the thickness of dielectric layer is decreased to increase capacitance density, then device integration increases, but leakage current generation becomes severe
Solution Approach 1:
The dielectric structure is divided into functional segments where the first layer (20-50 nm) provides high capacitance density through high-k material, while the second layer (10-30 nm) provides leakage suppression. This segmentation enables achieving high overall capacitance density without suffering from the leakage problems of uniformly thin dielectric layers.
Solution Approach 2:
The dielectric structure employs a composite of high-k and low-k materials in a layered configuration. The high-k material (HfO2, HfSiO, HfSiON) in the first layer maximizes capacitance, while the low-k material (SiO2, SiON) in the second layer minimizes leakage. This composite approach achieves superior capacitance density and leakage performance compared to single-material dielectric layers.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces leakage current to 1.0×10−4 A/cm2 at 1.0 V, ensuring reliable device operation while maintaining high capacitance, thus supporting the miniaturization of electronic devices.
Implementation Method 1
a dielectric layer between the lower electrode and the upper electrode, the dielectric layer including a first metal oxide area, a second metal oxide area, and a third metal oxide area
Data Source
AI summary
Provided is a semiconductor device including a lower electrode, an upper electrode isolated from direct contact with the lower electrode, and a dielectric layer between the lower electrode and the upper electrode, the dielectric layer comprising a first metal oxide area, a second metal oxide area, and a third metal oxide area. The third metal oxide area is between the first metal oxide area and the second metal oxide area, and includes boron and one or more metal elements selected from aluminum (Al), magnesium (Mg), silicon (Si), or beryllium (Be). In the third metal oxide area, a content of boron (B) is less than or equal to a content of the metal elements of Al, Mg, Si, and/or Be.