Multi-Quantum-Well LED Structure for Phosphor-Free Color Control
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Solution Overview
Problem
Existing optoelectronic devices using light-emitting diodes struggle to produce display sub-pixels emitting electromagnetic radiations at different wavelengths without relying heavily on phosphors, which are costly and difficult to accurately control for desired colors.
Innovation Solution
The optoelectronic device employs at least two light-emitting diodes with a first P-type doped semiconductor portion and a second N-type doped semiconductor portion, featuring multiple quantum wells and a conductive layer. This design allows for independent control of the conductive layer of each light-emitting diode, enabling the emission of electromagnetic radiations at different wavelengths without the need for phosphors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If phosphors are used to convert electromagnetic radiation to different wavelengths, then display sub-pixels can emit different colors, but the cost increases and color accuracy becomes difficult to control
Solution Approach 1:
The patent changes the physical parameters of the semiconductor material by introducing multiple quantum wells with different compositions and thicknesses. Each quantum well is designed with specific bandgap energies that directly determine the emission wavelength, eliminating the need for phosphor conversion. This allows precise control of emission colors through material composition parameters rather than relying on phosphor properties.
Solution Approach 2:
The active area is segmented into multiple quantum wells, each capable of emitting at different wavelengths. This segmentation allows independent optimization of each quantum well's emission characteristics, enabling multiple colors to be generated from a single LED structure without requiring separate phosphor layers for each wavelength.
2Productivity
If multiple light-emitting diodes are formed simultaneously by the same manufacturing steps, then production efficiency increases, but all diodes emit at the same wavelength
Solution Approach 1:
The patent applies local quality by creating spatial variations within the active area. Different regions (quantum wells) within the same LED structure have different local properties - specifically different compositions and thicknesses - that determine their emission wavelengths. This allows a single manufacturing process to produce wavelength-diverse diodes by controlling local material properties rather than requiring separate manufacturing steps.
Solution Approach 2:
The LED structure is designed with multi-functionality by incorporating multiple quantum wells that can emit at different wavelengths within a single device. This universal structure can produce multiple colors simultaneously, eliminating the need for separate LED chips for different colors while maintaining the benefits of simultaneous formation through the same manufacturing process.
3Reliability
If a conductive layer covers the lateral walls of the active area, then device performance improves, but independent control of each LED's conductive layer becomes complex
Solution Approach 1:
The conductive layer is segmented to be individually addressable for each LED. By dividing the conductive layer into discrete regions corresponding to each LED's active area, the patent enables independent control of each LED while maintaining the performance benefits of the conductive layer. This segmentation is achieved through patterning techniques that create separate conductive regions during the manufacturing process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enables the simultaneous formation of light-emitting diodes emitting at different wavelengths, reducing the reliance on phosphors and allowing for cost-effective, industrial-scale manufacturing of optoelectronic devices with improved color accuracy.
Implementation Method 1
an active area comprising multiple quantum wells between the first and second semiconductor portions
Data Source
AI summary
An optoelectronic device including at least first and second light-emitting diodes, each including a first P-type doped semiconductor portion and a second N-type doped semiconductor portion, an active area including multiple quantum wells between the first and second semiconductor portions, a conductive layer covering the lateral walls of the active area and of at least a portion of the first semiconductor portion, and an insulating layer interposed between the lateral walls of the active area and of at least a portion of the conductive layer. The device includes means for controlling the conductive layer of the first light-emitting diode independently from the conductive layer of the second light-emitting diode.