Multi-rank HBM Interface Circuit Parallel Pad Segmentation
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Solution Overview
Problem
Current high bandwidth memory (HBM) technologies face limitations in capacity and flexibility, particularly in implementing multi-rank configurations that can enhance memory performance in electronic devices.
Innovation Solution
The implementation of multi-rank HBM memory in electronic devices involves connecting exterior pads of multiple HBM channels in parallel and using an interface circuit with a specific configuration to manage data and clock enable signals, allowing for increased capacity and flexibility by enabling deeper memory access and improved data handling.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If single-rank HBM configuration is used, then device complexity is reduced, but memory capacity and depth are limited
Solution Approach 1:
The HBM memory system is divided into multiple independent channels, each capable of separate operation. The interface circuit is segmented to handle multiple channels simultaneously, with separate data pads and clock enable pads for each channel. This segmentation allows memory capacity to be increased by adding more channels without proportionally increasing the complexity of each individual channel's control logic.
Solution Approach 2:
The interface circuit is designed with universal functionality to support multi-rank HBM configurations. The same interface circuit can manage multiple channels and multiple HBM chip stacks through standardized pad connections and parallel interconnections. This multi-functionality allows a single interface circuit design to scale memory capacity without requiring fundamentally different circuit architectures.
2Quantity of substance
If multi-rank HBM configuration is implemented, then memory depth and capacity are increased, but the number of exterior pads and interconnections must be increased
Solution Approach 1:
Multiple channels are merged at the pad level by connecting corresponding data pads in parallel. The first exterior pads are connected to first data signals of first channels, and also to first data signals of second channels through parallel interconnections in the substrate. This merging allows multiple channels to share common pad structures, increasing memory depth without requiring separate pads for each channel.
Solution Approach 2:
The patent transitions from a single-channel, single-rank configuration to a multi-channel, multi-rank configuration by adding dimensional complexity. Multiple HBM chip stacks are stacked vertically, and multiple channels are arranged in parallel, creating a multi-dimensional memory architecture that increases capacity without proportionally increasing the footprint or pad count.
3Productivity
If parallel interconnections are used for data pads, then data bandwidth is increased, but signal integrity and clock enable management become more difficult
Solution Approach 1:
The interconnection system is segmented into two distinct types: parallel interconnections for data signals and channel-separate interconnections for clock enable signals. This segmentation allows data pads to be connected in parallel to maximize bandwidth, while clock enable signals maintain separate, dedicated paths to ensure signal integrity and precise timing control for each channel.
Solution Approach 2:
Different interconnection qualities are applied to different signal types based on their specific requirements. Data signals benefit from parallel interconnections that maximize bandwidth and utilize available routing resources efficiently. Clock enable signals receive specialized channel-separate interconnections that prioritize signal integrity, timing precision, and noise immunity, with each channel having its own dedicated interconnection path.
Data Source
AI summary
Certain aspects of the present disclosure provide techniques for relate to electronic devices that are configured to implement multi-rank high bandwidth memory (HBM) memory. In one aspect, an electronic device includes a chip that includes an interface circuit. The interface circuit is connected to first exterior pads. The first exterior pads have a first number of first data input/output exterior pads and a second number of clock enable output exterior pads. The first number is a first integer multiple of a number of data signals per channel of high bandwidth memory (HBM), and the second number is a second integer multiple of a number of clock enable signals per channel of the HBM. The second integer multiple is greater than the first integer multiple.