Semiconductor/Solid-State Device Details TRIZ Cases

Aluminum oxide and titanium carbide in the wedge bonding component reduce grain dropping and wear while enabling easier machining of copper wires.

Sacrificial layers diffuse embedded contaminants from sapphire substrates, reducing surface density to improve semiconductor wafer yield.

Sidewall protection layers on semiconductor bond pads prevent fluorine outdiffusion from interlayer dielectrics.

Plasma hydrophilization and liquid film pre-bonding eliminate solder bumps, preventing short circuits while reducing processing time.

Vertical stacking of semiconductor dies with metal pillars and conductive bumps reduces device footprint and weight while maintaining electrical connectivity.

Attaching a rigid plate to the heatsink base prevents delamination between the base and fins, maintaining efficient heat transfer.

A carrier with conductive projections attaches electronic members before encapsulation, reducing chip damage risk during thinning.

Segmented vias with expanding cross-sections lower thermal resistance in the conduction path, improving heat dissipation efficiency from semiconductor devices.

Adjusting via density based on EMI data reduces die area consumption and manufacturing costs while maintaining effective radio frequency isolation.

Thinned silicon carriers with multilevel wiring resolve fabrication cost and integration density trade-offs in semiconductor packaging.

A semiconductor package uses underfill material deposited in insulating layer channels to provide structural support for the substrate.

Offset bumps and central intermediate electrodes prevent bond voids and improve luminous efficiency in flip-chip LEDs.

Curing insulation resin near solder bump solidification points minimizes thermal stress on semiconductor chips.

An extended structure on the leadframe prevents encapsulant from covering sensor areas during molding, eliminating complex non-planar mold requirements.

A dielectric interposer uses recesses filled with conductive material to define passive element dimensions.

Parallel data pad connections increase memory capacity while separate clock enable paths maintain signal integrity across multiple ranks.

Embedding the lead frame contact region in a molded body eliminates expensive metal coatings, improving optical reflectivity and mechanical stability.

Resin film buffers stress from pillar electrodes to protect interlayer insulation films, preventing damage during flip-chip bonding.

Elastically deformable heat transfer elements bridge thermally conductive layers, resolving mechanical stress from differential thermal expansion coefficients.

Laser drilling forms microvias in insulating layers, replacing mechanical methods to reduce manufacturing costs and enable smaller hole sizes.

Dual-sided die mounting on build-up interconnect structures doubles effective area without expanding the horizontal footprint.

A barrier metal layer covers the Schottky electrode side surface to form an ohmic contact seal around the junction.

Dual stretching of scribed LED wafers fills separation gaps with optically opaque materials, eliminating light guiding and color variation in segmented arrays.

Dynamic RF switches in the coupler toggle between mated and unmated states, grounding external loads to prevent electrostatic discharge hazards.

Deviate vias from regular grids to reduce material stress accumulation and prevent cracks while maintaining high-density interconnects.

A separation plate with conductive layers and through-holes connects leads to the semiconductor chip in a double-sided cooling power module.

Harder second electrode layers combined with oxide coatings resolve mechanical strength limitations in SiC devices.

A no-slump solder paste forms vents through polymer volatilization to enable moisture outgassing within semiconductor interconnects.

Lateral bump bonding joins substrate terminals via composite pillars and solder layers, preventing solder cracks during reflow.

A lead with a side-opened recess allows resin infiltration to anchor the component, preventing detachment from the package.

Wiring substrate uses reference potential conductor patterns to shield input signal wires from electromagnetic noise.

A heat radiating member with a recessed portion conducts thermal energy from semiconductor devices to external environments.

Sn-Sb-Ag-Cu solder alloy suppresses low melting point phases via precise compositional control, ensuring joint reliability at 280°C.

Grind solder balls on under bump metallurgy to form micro bump structures, reducing manufacturing cost while maintaining precision.

Vertical interconnection stacking in nitride semiconductor devices reduces parasitic capacitance.

High gel fraction resin in the circuit layer inhibits swelling and dissolution, stabilizing electrical resistance across different insulating coating types.

A noble metal protection layer selectively deposited on copper interconnect cap surfaces to enhance etch resistivity during wet chemical processing.

Embedding exposed terminals in an insulation layer reduces manufacturing complexity while maintaining coplanar surfaces for reliable connections.

Non-wetting layers on metal pillar sidewalls confine molten solder to the top surface, preventing bridging and yield loss from uncontrolled solder flow.

A silicon substrate with through vias uses a metal heat dissipating area to transmit thermal energy from the conductive structures.

Laser drilling reduces plated through hole sizes to shrink anti-pads, resolving electromagnetic interference risks while cutting substrate layer counts.

Lateral chip arrangement on the main substrate reduces electrical connection length, preventing wire short-circuits while achieving lightweight packaging.

A semiconductor structure with a first recess isolates the active layer, preventing oxidation damage while maintaining high light output.

Dual heat sinks on opposite sides of a semiconductor die improve heat dissipation while maintaining thin package thickness.

A fan-out interconnect structure spreads contact pads to lower substrate input-output density.

Lateral bump portions wipe against pad abutment zones to remove oxides and increase contact stress for reliable interconnects.

Ultrafine fibrous carbon enhances in-plane thermal conductivity, resolving insufficient heat dissipation in electronic devices.

A sintered copper powder joint connects semiconductor dies to metal supports via interdiffusion portions straddling the bonding interface.

Segmenting chips between liquid coolers and embedding them in insulation material resolves thermal stress while preventing partial discharges.