Silicon Space Transformer Carriers for High-Density Semiconductor Packaging
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Solution Overview
Problem
Conventional organic and ceramic carrier technologies for semiconductor chip packaging face limitations in achieving high density and low cost solutions due to high fabrication costs and inherent limitations in integration density, power density, and I/O density, making them unsuitable for meeting increasing demands for higher performance and miniaturization.
Innovation Solution
The use of silicon space transformer chip level package structures with conductive through-vias and multilevel wiring layers on thinned silicon substrates, allowing for high-density interconnection and integration of multiple chips, while reducing non-planarity and assembly costs, and enabling optical communications through open cavities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional organic or ceramic carrier technologies are used for chip packaging, then fabrication and assembly can be performed using traditional processes, but the integration density, I/O density, and power density are limited and fabrication costs are high
Solution Approach 1:
The patent transitions from conventional organic or ceramic carrier materials to silicon-based carrier substrates, fundamentally changing the material parameter to achieve higher integration density and I/O density while reducing fabrication costs through compatibility with existing silicon semiconductor manufacturing processes
Solution Approach 2:
The invention employs a composite structure combining thinned silicon carrier substrates with metal interconnect layers and dielectric materials, creating a hybrid system that leverages the high-density interconnection capabilities of silicon while maintaining the necessary electrical and mechanical properties through multi-layer composite construction
2Volume of moving object
If thinned IC devices are fabricated to achieve higher integration density, then smaller form factors and higher circuit density are achieved, but the devices become fragile and non-planar due to stresses from circuits, wiring, or vias
Solution Approach 1:
The patent applies stress compensation techniques where additional layers or structural elements are introduced to counterbalance the internal stresses generated by thinned IC devices, preventing excessive bowing or bending while maintaining the reduced form factor
Solution Approach 2:
The invention addresses planarity issues by transitioning from a two-dimensional surface problem to a three-dimensional solution, using multi-layer carrier structures with interconnect layers and dielectric materials distributed through the thickness dimension to compensate for stress-induced non-planarity
3Productivity
If the number of circuits on a single chip is increased to achieve higher functionality, then system performance is improved, but higher density I/O packaging is required which conventional carriers cannot support
Solution Approach 1:
The patent utilizes three-dimensional vertical interconnections through the carrier substrate, employing through-silicon vias and multi-layer metal interconnects to achieve high-density I/O routing in the vertical dimension, thereby supporting increased circuit functionality without proportionally increasing the chip's footprint
4Manufacturing precision
If conventional carrier technologies are used to meet increasing demands for higher density and higher performance, then existing manufacturing processes can be maintained, but the ability to achieve low cost packaging solutions is limited
Solution Approach 1:
The silicon carrier substrate serves multiple functions simultaneously: it provides mechanical support, electrical interconnection, thermal management, and stress compensation, eliminating the need for separate components and reducing overall fabrication costs while achieving higher integration density
Data Source
AI summary
Apparatus and methods are provided for high density packaging of semiconductor chips using silicon space transformer chip level package structures, which allow high density chip interconnection and/or integration of multiple chips or chip stacks high I/O interconnection and heterogeneous chip or function integration.