Semiconductor Device Recess Design for UV Light Extraction
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Solution Overview
Problem
Vertical-type UV light-emitting devices face challenges in implementation due to difficulties in light output caused by oxidation and moisture exposure, leading to reduced efficiency and reliability.
Innovation Solution
A semiconductor device design featuring a semiconductor structure with a first recess passing through the second-conductive-type semiconductor layer and active layer, exposed in a partial region of the first-conductive-type semiconductor layer, which enhances light extraction efficiency and current spreading, while protecting the active layer from oxidation by separating it from the outer surface.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If the active layer is exposed at the outer surface to improve light extraction efficiency, then light output is enhanced, but oxidation and moisture exposure occur leading to reduced reliability
Solution Approach 1:
The patent segments the semiconductor structure by introducing a first recess that divides the structure into distinct regions. The active layer is positioned within this recess, creating a separated configuration where the light-emitting region is isolated from the outer surface, thus preventing oxidation while maintaining light extraction efficiency.
Solution Approach 2:
The first recess acts as an intermediary structure between the active layer and the outer surface. By positioning the active layer within the recess rather than directly at the surface, the recess serves as a protective intermediary that prevents direct exposure to oxidizing environments while still allowing light to be extracted effectively.
2Productivity
If the active layer is positioned at the outer surface to enhance light extraction, then light emission is improved, but oxidation causes performance degradation
Solution Approach 1:
The patent moves the active layer from a two-dimensional surface position to a three-dimensional position within the first recess. This dimensional change allows the active layer to be positioned inside the recess structure, protecting it from oxidation while maintaining its light extraction functionality through the recess opening.
Solution Approach 2:
The first recess is formed in advance during the manufacturing process, creating a protective structure before the device is exposed to oxidizing environments. This preliminary structural preparation ensures that the active layer is already protected from oxidation before it can cause performance degradation.
3Reliability
If a protective structure is added to prevent oxidation, then reliability is improved, but device complexity increases
Solution Approach 1:
The first recess serves multiple functions simultaneously: it protects the active layer from oxidation, enables light extraction, and provides a position for electrode placement. By making this single structural element multi-functional, the patent avoids adding separate protective components, thus maintaining simplicity while improving reliability.
Solution Approach 2:
The patent merges the protective function, light extraction function, and electrode positioning function into a single integrated structure (the first recess). This consolidation eliminates the need for separate protective layers or additional components, reducing overall device complexity while achieving oxidation protection.
Data Source
AI summary
Exemplary embodiments provide a semiconductor device including: a semiconductor structure which includes a first-conductive-type semiconductor layer, a second-conductive-type semiconductor layer, and an active layer disposed between the first-conductive-type semiconductor layer and the second-conductive-type semiconductor layer, wherein the semiconductor structure has a first recess passing through the second-conductive-type semiconductor layer, the active layer and a first portion of the first-conductive-type semiconductor layer; and a plurality of second recesses passing through the second-conductive-type semiconductor layer, the active layer and a second portion of the first-conductive-type semiconductor layer, wherein the first recess is disposed along an outer surface of the semiconductor structure, wherein the plurality of second recesses are surrounded by the first recess.