Multi-Terminal Capacitor Structure for Multi-Power-Domain Decoupling
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Solution Overview
Problem
Existing semiconductor structures face challenges in integrating decoupling capacitors for different power domains, requiring multiple capacitors and occupying significant space, which limits design flexibility and increases system current-resistance (IR) drop.
Innovation Solution
A multi-terminal capacitor structure is introduced, comprising a substrate with insulating layers and multiple terminals, allowing multiple capacitors to share space and be electrically isolated, reducing the need for separate capacitors for each power domain and enhancing design flexibility.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If multiple separate decoupling capacitors are used for different power domains, then each power domain can have dedicated capacitance, but the occupied space increases significantly and design flexibility is limited
Solution Approach 1:
The patent combines multiple decoupling capacitors into a single integrated multi-terminal capacitor structure that serves multiple power domains simultaneously. This merging approach reduces the total occupied area while maintaining dedicated decoupling capability for each power domain through separate terminals and internal isolation structures.
Solution Approach 2:
The multi-terminal capacitor structure is designed to serve multiple functions by providing dedicated capacitance for different power domains through its multiple terminals. A single capacitor structure replaces what would traditionally require multiple separate capacitors, enabling one component to perform the decoupling function for multiple power domains.
2Reliability
If multiple separate decoupling capacitors are used for different power domains, then each capacitor can be optimized for its specific domain, but device complexity increases
Solution Approach 1:
The patent merges multiple separate capacitor components into a single integrated multi-terminal capacitor structure. This reduces device complexity by eliminating the need for multiple discrete capacitor components while maintaining the ability to provide dedicated decoupling for each power domain through internal structural design and terminal separation.
Solution Approach 2:
The multi-terminal capacitor is designed as a universal component that can serve multiple power domains simultaneously. By providing multiple terminals and internal isolation structures, a single capacitor structure performs the function of multiple separate capacitors, thereby reducing overall device complexity.
3Ease of manufacture
If traditional capacitor structures are used, then manufacturing is straightforward, but equivalent series resistor and inductance are higher causing increased IR drop
Solution Approach 1:
The patent transitions from traditional planar capacitor layouts to a vertical stacked configuration where capacitor elements are arranged in multiple layers. This dimensional change reduces the current path length and parasitic inductance, thereby lowering ESR and ESL values while maintaining ease of manufacture through standard semiconductor fabrication processes.
Solution Approach 2:
The multi-terminal capacitor structure employs nested or stacked arrangements where capacitor elements are positioned in overlapping or nested configurations. This nesting approach minimizes the current loop area and parasitic inductance, reducing IR drop and energy loss while remaining compatible with conventional manufacturing techniques.
Data Source
AI summary
A semiconductor structure includes a first substrate having a wiring structure, a first semiconductor die disposed on the first substrate, and a multi-terminal capacitor structure disposed on the first substrate. The multi-terminal capacitor includes a second substrate, an insulating layer disposed over the second substrate, a first multi-terminal capacitor disposed over the insulating layer and electrically coupled to the first semiconductor die through the wiring structure, and a second multi-terminal capacitor disposed over the insulating layer and electrically coupled to the second semiconductor die through the wiring structure, wherein the first multi-terminal capacitor and the second multi-terminal capacitor are electrically isolated from the second substrate.