Multi-Voltage MIM Capacitor Structure for Compact CMOS Decoupling

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Solution Overview

Problem

Current MIM capacitors struggle to efficiently support both low and high voltage applications within CMOS devices due to area utilization and routing challenges when arranging multiple low voltage capacitors in series.

Innovation Solution

A metal-insulator-metal (MIM) capacitor structure with multiple capacitance regions, each optimized for different maximum operating voltages, allowing a single capacitor to support various voltage applications by varying the number of conformal plate and insulator layers in each region.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If multiple low voltage capacitors are arranged in series to support high voltage applications, then the capacitor can handle both low and high voltage, but the area utilization deteriorates and routing becomes more complex

Engineering Contradiction:
Improvevoltage application supportVSAvoidcapacitor area
Core Design Contradiction:
Adaptability or versatilityVSArea of stationary object

Solution Approach 1:

The capacitor structure is segmented into multiple capacitance regions (first capacitance region and second capacitance region) with different maximum operating voltages. Each region can be independently configured with different numbers of conformal plate and insulator layers, allowing the same physical structure to support both low voltage and high voltage applications simultaneously without requiring series arrangements of separate capacitors.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

A single MIM capacitor structure is designed to perform multiple functions by incorporating capacitance regions with different voltage ratings. The first capacitance region handles low voltage signals while the second capacitance region handles high voltage signals, making one capacitor component universal for both low voltage and high voltage applications, thereby eliminating the need for separate capacitors and reducing overall area.

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Adaptability or versatility

If multiple low voltage capacitors are arranged in series to support high voltage applications, then the capacitor can handle both low and high voltage, but the routing complexity increases

Engineering Contradiction:
Improvevoltage application supportVSAvoidrouting complexity
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The capacitor structure is segmented into multiple capacitance regions (first capacitance region and second capacitance region) with different maximum operating voltages. Each region can be independently configured with different numbers of conformal plate and insulator layers, allowing the same physical structure to support both low voltage and high voltage applications simultaneously without requiring series arrangements of separate capacitors.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

A single MIM capacitor structure is designed to perform multiple functions by incorporating capacitance regions with different voltage ratings. The first capacitance region handles low voltage signals while the second capacitance region handles high voltage signals, making one capacitor component universal for both low voltage and high voltage applications, thereby eliminating the need for separate capacitors and reducing overall area.

Inventive Principle:
Principle #6Universality (Multi-functionality)

3Area of stationary object

If a single MIM capacitor supports both low and high voltage applications, then area utilization improves, but the capacitor structure becomes more complex

Engineering Contradiction:
Improvecapacitor areaVSAvoidcapacitor structure
Core Design Contradiction:
Area of stationary objectVSDevice complexity

Solution Approach 1:

Different regions of the capacitor structure are assigned different local qualities - the first capacitance region is optimized for low voltage with its specific number of conformal plate and insulator layers, while the second capacitance region is optimized for high voltage with different layer configurations. This local differentiation allows each region to perform its specific function efficiently while maintaining a compact unified structure.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The capacitor structure employs a nested configuration where multiple capacitance regions are integrated within a single MIM capacitor footprint. The first and second capacitance regions are arranged in a nested or adjacent manner sharing common substrates and interconnect structures, allowing high voltage and low voltage functionality to be embedded within one another without requiring separate discrete capacitor components.

Inventive Principle:
Principle #7Nested doll (Nesting)

Data Source

PatentUS11908888B2Metal-insulator-metal capacitor structure supporting different voltage applications
Publication Date: 2024.02.20 INTERNATIONAL BUSINESS MACHINE CORPORATION
  • US11908888B2 patent drawing
  • US11908888B2 patent drawing
  • US11908888B2 patent drawing

AI summary

A metal-insulator-metal (MIM) capacitor structure includes a substrate extending along a first direction to define a length, a second direction orthogonal to the first direction to define a width, and a third direction orthogonal to the first and second direction to define a height. The substrate includes a first capacitance region and a second capacitance region. The first capacitance region has a first maximum operating voltage (Vmax) and the second capacitance region has a second Vmax that is greater than the first Vmax.