Multi-Width Semiconductor Layout for Scaled MOSFET Reliability
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Solution Overview
Problem
As semiconductor devices are scaled down, their operation characteristics deteriorate, necessitating improved methods to overcome integration limitations and enhance performance.
Innovation Solution
A semiconductor device design featuring active patterns, semiconductor and source/drain patterns with varying widths, and isolation insulating layers to improve electrical characteristics and reliability, including a gate electrode extending in a specific direction.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If metal-oxide-semiconductor field effect transistors are scaled down to achieve higher integration, then device density increases, but operation characteristics deteriorate
Solution Approach 1:
The transistor gate is segmented into multiple gates (first gate electrode and second gate electrode) that are positioned at different heights and orientations. This segmentation allows independent control of different channel regions, enabling better performance optimization without requiring further scaling of individual transistor dimensions.
Solution Approach 2:
The patent introduces a vertical dimension by forming gate electrodes at different heights (first gate electrode in first height region, second gate electrode in second height region). This three-dimensional gate structure allows control of the channel from multiple spatial perspectives, improving device characteristics without reducing planar footprint.
2Productivity
If transistor dimensions are reduced to increase integration, then more devices fit on chip, but manufacturing precision requirements increase
Solution Approach 1:
The gate structure is divided into multiple separable gate electrodes formed at different heights and positions. Each gate electrode can be formed and controlled independently, allowing standard manufacturing processes to be applied to each segment rather than requiring ultra-precise control of a single miniaturized gate structure.
Solution Approach 2:
By moving from a two-dimensional planar gate to a three-dimensional multi-height gate structure, the patent distributes dimensional requirements across multiple layers. This allows each individual gate electrode to maintain manufacturable dimensions while achieving higher overall integration density through vertical stacking.
3Productivity
If device size is reduced to improve integration, then chip capacity increases, but design freedom decreases
Solution Approach 1:
The segmented gate structure allows different gate electrodes to be independently designed and configured for different application requirements. Designers can selectively activate or modify specific gate regions without affecting the entire device, providing greater design flexibility within compact footprints.
Solution Approach 2:
The vertical stacking of gate electrodes at different heights creates additional design dimensions. Engineers can optimize each height region for different functions or performance characteristics, increasing design freedom while maintaining small planar dimensions for high integration.
Data Source
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AI summary
Provided is a semiconductor device including a first active pattern and a second active pattern spaced apart from each other in a first direction, a first semiconductor pattern and a second semiconductor pattern overlapping the first active pattern, a third semiconductor pattern and a fourth semiconductor pattern overlapping the second active pattern, a lower isolation insulating layer between the first and second active patterns, source/drain patterns on the first and second active patterns and a gate electrode extending in the first direction. The first and third semiconductor patterns are arranged in the first direction. The second and fourth semiconductor patterns are arranged in the first direction. A width of the first semiconductor pattern in the first direction is greater than a width of the second semiconductor pattern in the first direction. A width of the third semiconductor pattern in the first direction is greater than a width of the fourth semiconductor pattern in the first direction.