Multi-Color Electroluminescent Display Pixels via Nano-Opening Epitaxy

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Solution Overview

Problem

Existing methods for forming multi-color light-emitting display devices face challenges such as difficulty in bonding and aligning pixels on a substrate with small pitch, limited lifetime of materials, and high cost due to multiple epitaxy sequences for achieving different emission wavelengths.

Innovation Solution

A light-emitting device comprising multiple cells with stacks of semiconductor materials, where each cell has a specific layer structure and nano-openings in a mask to form interfaces between layers, allowing for simultaneous epitaxy of cells emitting in different wavelength ranges, reducing the need for multiple epitaxy sequences and color conversion elements.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If pixels are transferred onto a same substrate based on different semiconductor materials, then multi-color emission is achieved, but bonding and alignment difficulty increases

Engineering Contradiction:
Improvemulti-color emission capabilityVSAvoidbonding and alignment difficulty
Core Design Contradiction:
Adaptability or versatilityVSEase of manufacture

Solution Approach 1:

The patent merges the formation of different semiconductor layers (GaN and AlGaN) into a single epitaxial growth process on a common substrate. By using a mask with through-openings to define pixel regions and controlling indium incorporation during a single epitaxy sequence, the invention simultaneously forms multiple light-emitting cell types without requiring separate transfer and bonding steps, thus resolving the manufacturing complexity while maintaining multi-color capability

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The patent segments the substrate into different pixel regions using a mask with through-openings, where each region is selectively exposed to indium-containing precursors during epitaxy. This spatial segmentation allows different semiconductor compositions to be formed in different pixel areas during a single growth process, enabling multi-color emission without complex bonding operations

Inventive Principle:
Principle #1Segmentation

2Adaptability or versatility

If color conversion layers are deposited locally to achieve different wavelengths, then multi-color display is enabled, but local deposition difficulty and material lifetime limitations increase

Engineering Contradiction:
Improvewavelength conversion capabilityVSAvoidlocal deposition difficulty
Core Design Contradiction:
Adaptability or versatilityVSEase of manufacture

Solution Approach 1:

Instead of converting a single wavelength to multiple wavelengths using color conversion layers deposited after epitaxy, the patent inverts the approach by directly forming multiple wavelength-emitting semiconductor structures during the epitaxial growth process itself. By controlling indium incorporation in different pixel regions, the invention achieves multi-color emission from the light-emitting cells themselves, eliminating the need for subsequent color conversion layer deposition and associated manufacturing difficulties

Inventive Principle:
Principle #13The other way round (Inversion)

3Adaptability or versatility

If multiple successive epitaxy sequences are used to form different light-emitting cells, then wavelength diversity is achieved, but manufacturing cost increases

Engineering Contradiction:
Improveemission wavelength rangeVSAvoidnumber of epitaxy sequences
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The patent combines the formation of multiple light-emitting cell types with different emission wavelengths into a single epitaxial growth sequence. By using a mask to define pixel regions and controlling indium precursor incorporation during this unified process, the invention simultaneously forms GaN-based and AlGaN-based light-emitting cells with different bandgaps and emission wavelengths, reducing manufacturing complexity and cost compared to multiple separate epitaxy sequences

Inventive Principle:
Principle #5Merging (Combining)

4Measurement precision

If small pitch between pixels is implemented, then display resolution is improved, but pixel transfer and alignment precision requirements increase

Engineering Contradiction:
Improvedisplay resolutionVSAvoidpixel alignment precision
Core Design Contradiction:
Measurement precisionVSManufacturing precision

Solution Approach 1:

The patent segments the substrate into densely packed pixel regions defined by a mask with through-openings, allowing direct in-situ formation of multiple pixel types during a single epitaxial growth process. This approach eliminates the need for post-growth transfer and alignment operations, enabling small pitch implementations without the associated precision alignment challenges

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables the efficient formation of multi-color display devices with reduced complexity and cost, while achieving desired emission wavelengths through strain-induced indium concentration differences in the active layers.

Implementation Method 1

achieving desired emission wavelengths through strain-induced indium concentration differences in the active layers

Methodology Applied
Scientific EffectStrain-induced indium concentration differences:

Data Source

PatentUS12027568B2Multi-colour electroluminescent display device and method for manufacturing such a device
Publication Date: 2024.07.02 COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
  • US12027568B2 patent drawing
  • US12027568B2 patent drawing
  • US12027568B2 patent drawing

AI summary

A device including first and second light-emitting cells respectively emitting in first and second wavelength ranges, wherein:each cell includes a stack of a first layer of a first semiconductor material and of a second layer of a second semiconductor material having a different mesh parameter;in the first cell, the first layer is in contact with the second layer across the entire surface of the cell; andin the second cell, a mask provided with a plurality of through nano-openings forms an interface between the first layer and the second layer, the second layer comprising a plurality of nanopillars of the second material arranged in the nano-openings of the mask, and a coalesced layer extending across substantially the entire surface of the cell on the side of the mask opposite to the first layer.