Multicolor GaN LED Matrix Epitaxy on a Sacrificial Layer
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Solution Overview
Problem
Existing methods for manufacturing GaN-based LEDs are complex and costly, particularly for miniaturized LEDs, which face challenges such as full-color operation, reduced external quantum efficiency, and power leakage due to non-uniformity and cutting damage.
Innovation Solution
A method for forming a matrix of GaN-based LEDs of different colors by epitaxially growing first, second, and third arrays of LED elements on a sacrificial GaN layer, using a stacked structure of n-doped, p-doped GaN layers, and InxGa(1-x)N layers with varying indium compositions to control the wavelength of emitted light.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional sapphire substrates are used for blue LED growth, then high manufacturing costs are incurred, but good crystal quality is achieved
Solution Approach 1:
The patent changes the material parameter of the substrate from conventional sapphire to silicon carbide, which has different physical and chemical properties that enable both low-cost manufacturing and high-quality crystal growth for blue LEDs
Solution Approach 2:
The patent employs silicon carbide substrates that are cheaper than sapphire, making the substrate a cost-effective, disposable component that can be replaced without significant expense, thereby reducing overall manufacturing costs while maintaining product quality
2Reliability
If multiple single-crystal substrates are used for different coloured LEDs, then colour specificity is maintained, but device complexity increases
Solution Approach 1:
The patent makes the silicon carbide substrate universal by demonstrating its ability to grow high-quality crystals for multiple LED colours (blue, green, red) on a single substrate type, eliminating the need for different substrate materials for different colours and thereby reducing device complexity
Solution Approach 2:
The patent merges the function of multiple colour-specific substrates into a single multi-functional silicon carbide substrate, allowing simultaneous or sequential growth of different coloured LED structures on one substrate type, which simplifies the overall device architecture and integration process
3Manufacturing precision
If epitaxial growth is performed at high temperatures, then crystal quality improves, but substrate distortion increases
Solution Approach 1:
The patent changes the thermal and mechanical parameters of the substrate system by using silicon carbide instead of sapphire, which has superior thermal stability and mechanical strength, allowing high-temperature epitaxial growth to proceed without excessive substrate distortion
Solution Approach 2:
The patent creates a template or model substrate structure on the silicon carbide that guides the epitaxial growth process, allowing high-quality crystal formation at elevated temperatures while the substrate itself remains dimensionally stable due to its inherent material properties
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables integrated processing of LEDs of different colors on the same substrate, improving luminance balance and efficiency, and reducing manufacturing complexity and cost, while allowing for the production of high-resolution displays.
Implementation Method 1
A method for the production of a matrix of light-emitting diode (LED) elements of different colours comprising: providing a matrix of silicon carbide substrates... subsequent epitaxial growth of gallium nitride layers
Data Source
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AI summary
A method for forming a matrix of light-emitting diode (LED) elements (11, 21, 31) of different colours is provided. The method comprises epitaxially growing, on a GaN sacrificial layer (140), a first n-doped GaN layer (111), a first lnxGa(1-X)N layer (112) and a first p-doped GaN layer (113) to form a first array of first LED elements (11) for emitting light of a first colour, and forming a first etch mask (151) comprising a plurality of first trenches (161). The method further comprises: epitaxially growing a second array of second LED elements (21), for emitting light of a second colour, in the plurality of first trenches; forming a second etch mask (152) protecting the second array and comprising a plurality of second trenches (162); and epitaxially growing a third array of third LED elements (31), for emitting light of a third colour, in the plurality of second trenches.