Multi-Color Light Emitting Transistor Stack Fabrication
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Solution Overview
Problem
Conventional methods for fabricating multi-color light emitting display chips face challenges such as decreased alignment accuracy, increased cost, and stress-induced warpage due to complex alignment and transfer processes, leading to high power consumption and heat dissipation issues.
Innovation Solution
A method involving the formation of a stack structure on a substrate with alternating metal and light emitting layers, followed by selective etching to create multi-color light emitting transistors, where each transistor shares common metal layers and has distinct light emitting layers, with micro-gap structures to alleviate stress and improve efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional processes are used to fabricate different types of light emitting regions separately, then each region can be formed with specific properties, but the alignment accuracy decreases and manufacturing complexity increases
Solution Approach 1:
The patent merges multiple light emitting regions (first type and second type) into a single integrated structure formed simultaneously on the same substrate. Instead of separately fabricating each region and then aligning them, the invention forms both regions in one manufacturing process, eliminating alignment issues and reducing process complexity while maintaining the distinct functional properties of each light emitting type
Solution Approach 2:
The patent creates a universal substrate and base structure that supports multiple types of light emitting regions simultaneously. The common base layer and substrate serve as a universal platform for both first type and second type light emitting regions, allowing different functional regions to coexist and be fabricated together without requiring separate substrates or bases for each type
2Ease of manufacture
If base peeling is performed to transfer epitaxial layers, then light emitting regions can be formed, but stress-induced warpage and deformation occur
Solution Approach 1:
The patent employs a carefully designed base layer structure with appropriate thickness and material properties that cushions and absorbs thermal expansion stress during the epitaxial growth and fabrication processes. This pre-designed stress management in the base layer prevents warpage and deformation of the epitaxial light emitting layers, eliminating the need for base peeling operations that would cause mechanical stress and damage
3Adaptability or versatility
If multiple separate light emitting regions are integrated, then multi-color display capability is achieved, but power consumption increases and heat dissipation becomes difficult
Solution Approach 1:
The patent merges multiple light emitting regions into a single integrated structure with shared base layers and substrates, reducing the total number of discrete components. This consolidation decreases overall power consumption and improves heat dissipation efficiency while maintaining the ability to display multiple colors through the different light emitting regions operating simultaneously on the unified platform
Data Source
AI summary
A method for fabricating a multi-color light emitting pixel unit, includes: forming a stack structure on a substrate, the stack structure comprising a first metal layer, a first type of light emitting layer, a second metal layer, and a second type of light emitting layer in an order from bottom to top; patterning the second type of light emitting layer and the second metal layer until a portion of the first type of light emitting layer is exposed; and selectively etching the stack structure to form a first light emitting transistor and a second light emitting transistor, the first light emitting transistor including the first metal layer and the first type of light emitting layer, and the second light emitting transistor including the first metal layer, the first type of light emitting layer, the second metal layer, and the second type of light emitting layer.