Multi-Gate Transistor Design for Short Channel Effect Control
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Solution Overview
Problem
Current semiconductor devices face challenges in scaling and performance enhancement due to limitations in transistor design, particularly in managing short channel effects and current control without increasing gate length.
Innovation Solution
The semiconductor device incorporates a multi-gate transistor design with a three-dimensional channel structure, featuring distinct active patterns, sheet patterns, and gate structures, allowing for improved current control and reduced short channel effects by varying the height and width of patterns and the number of sheet patterns.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If gate length is increased to control short channel effects, then current control is improved, but device scaling is hindered
Solution Approach 1:
The patent transitions from a conventional planar gate structure to a multi-gate three-dimensional structure. The gate electrode wraps around the channel region in multiple directions, creating vertical and lateral gating control. This dimensional change allows effective channel control without increasing the horizontal gate length, thereby resolving the contradiction between current control and device scaling.
Solution Approach 2:
The multi-gate structure implements a nested configuration where the gate electrode is positioned to control the channel from multiple levels. The first gate electrode controls the channel from above, while the second gate electrode provides additional control from the side, creating a nested gating system that enhances control efficiency without proportionally increasing the overall device footprint.
2Reliability
If multi-gate three-dimensional channel structure is implemented to improve current control, then short channel effects are suppressed, but device complexity increases
Solution Approach 1:
The multi-gate structure is segmented into distinct components: a first gate electrode for primary channel control and a second gate electrode for additional control. The channel region is also segmented into a first channel region and a second channel region, each independently controllable. This segmentation allows complex three-dimensional control functionality to be achieved through modular, manageable components, reducing the practical complexity of fabrication and design.
Solution Approach 2:
The patent applies local quality by creating different gate structures for different regions of the channel. The first gate electrode and second gate electrode have different positions, orientations, and control characteristics, allowing optimized control for specific local requirements. This enables effective short channel effects suppression through localized control rather than uniform complex structuring throughout the entire device.
Data Source
AI summary
A semiconductor device includes a first active pattern including a first lower pattern and first sheet patterns; a second active pattern including a second lower pattern and second sheet patterns, a height of the second lower pattern being smaller than a height of the first lower pattern; a first gate structure on the first lower pattern; a second gate structure on the second lower pattern; a first source/drain pattern on the first lower pattern and connected to the first sheet patterns; and a second source/drain pattern on the second lower pattern and connected to the second sheet patterns, wherein a width of an upper surface of the first lower pattern is different from a width of an upper surface of the second lower pattern, and wherein a number of first sheet patterns is different from a number of second sheet patterns.