Multilayer Capacitor Structure for High Capacitance in Limited Area
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Solution Overview
Problem
Existing capacitors face constraints on size and substrate limitations due to the use of high-resistance silicon substrates and limited methods for increasing the relative permittivity of dielectric layers, making it difficult to enhance capacitance without increasing size.
Innovation Solution
A capacitor design featuring a substrate with electrical conductivity, multiple dielectric layers, and conductors, where the substrate is electrically insulated by dielectric layers and connected to a conductor, allowing for a larger size and high capacitance without semiconductor MOS process constraints.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If high-resistance silicon substrates and conventional dielectric layers are used, then manufacturing process compatibility is maintained, but capacitance enhancement is limited and size constraints increase
Solution Approach 1:
The patent employs a composite dielectric structure consisting of multiple layers with different properties: a first dielectric layer with high relative permittivity (greater than 10) deposited on the substrate, and a second dielectric layer with lower relative permittivity (1 to 10) deposited on the first dielectric layer. This composite arrangement enables high capacitance while maintaining manageable physical dimensions, as the high-permittivity layer provides the primary capacitance enhancement without requiring excessive thickness that would increase overall device size.
2Reliability
If the relative permittivity of dielectric layers is increased to enhance capacitance, then capacitance improves, but manufacturing complexity and process limitations increase
Solution Approach 1:
The patent utilizes parameter changes by selecting dielectric materials with specific relative permittivity values for different layers. The first dielectric layer uses materials with high relative permittivity (greater than 10) such as barium strontium titanate (BST), lead zirconate titanate (PZT), or silicon nitride, while the second dielectric layer uses materials with lower relative permittivity (1 to 10) such as silicon oxide or silicon nitride. This parameter differentiation optimizes capacitance while maintaining compatibility with existing semiconductor manufacturing processes.
3Reliability
If multiple dielectric layers with different permittivities are stacked, then capacitance is enhanced, but device structure complexity increases
Solution Approach 1:
The patent segments the dielectric structure into two distinct layers with different functional roles. The first dielectric layer (with high relative permittivity greater than 10) serves as the primary capacitance-enhancing layer deposited directly on the substrate, while the second dielectric layer (with lower relative permittivity of 1 to 10) serves as a protective or insulating layer deposited on top. This segmentation achieves high capacitance through the first layer while the second layer provides structural simplicity and process compatibility.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design offers reduced size constraints and high capacitance, with improved durability and reliability through conductive connections and dielectric insulation, enabling larger capacitors with enhanced performance.
Implementation Method 1
The substrate is electrically insulated from the first conductor by the first dielectric layer
Implementation Method 2
The second conductor is electrically insulated from the first conductor by the second dielectric layer
Data Source
AI summary
A capacitor includes: a substrate having electrical conductivity; a first dielectric layer disposed on the substrate; a first conductor disposed on the first dielectric layer and having a layer shape; a second dielectric layer disposed on the first conductor; and a second conductor disposed on the second dielectric layer. The first conductor includes an exposed portion that is covered by neither the second dielectric layer nor the second conductor. The substrate is electrically insulated from the first conductor by the first dielectric layer, and the second conductor is electrically insulated from the first conductor by the second dielectric layer. The substrate includes a conductive portion electrically connected to the second conductor.