Multilayer Structure Coupling Layer Shear Strength
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Solution Overview
Problem
Next-generation semiconductor packaging materials face challenges in meeting demands for low cure temperature, low shrinkage, high thermal stability, low residual stress, and compatibility with advanced chip architectures, particularly due to the limitations of conventional polyimides in wafer and panel-level manufacturing.
Innovation Solution
A multilayer structure comprising a substrate, a coupling layer, and a dielectric layer, where the coupling layer is formed from a composition including a polymer, cross-linker, initiator, and solvent, enhancing the shear strength of the dielectric layer and providing superior adhesion and mechanical properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional polyimides are used as dielectric material, then good electrical and mechanical properties are achieved, but high cure temperature (>350°C) and high post-cure shrinkage occur
Solution Approach 1:
The patent employs a composite material system consisting of polyimide polymer combined with reactive diluents (such as glycidyl methacrylate, γ-methacryloxypropyl trimethoxysilane) and photoinitiators. This composite formulation enables the dielectric layer to achieve both the desired electrical/mechanical properties of polyimide and the low-cure-temperature processing required for plastic core compatibility, resolving the contradiction between material performance and processing temperature.
2Reliability
If conventional polyimides are used as dielectric material, then good electrical and mechanical properties are achieved, but high post-cure shrinkage leads to residual stress and wafer bowing
Solution Approach 1:
The patent modifies the chemical composition parameters of the polyimide system by incorporating reactive diluents with low shrinkage characteristics and adjusting the curing mechanism from high-temperature thermal cure to lower-temperature photopolymerization. This parameter change reduces post-cure shrinkage to below 1%, thereby minimizing residual stress and preventing wafer bowing while maintaining the electrical and mechanical reliability of the dielectric material.
3Strength
If thin adhesive primer layer is applied to improve adhesion, then adhesion strength is improved, but manufacturing complexity increases
Solution Approach 1:
The patent merges the adhesive primer layer and the dielectric layer into a single integrated coating composition. The dielectric layer formulation itself contains adhesion promoters (such as silane-containing reactive diluents and polyimide homopolymers) that provide strong adhesion to the substrate without requiring a separate primer layer. This integration maintains high adhesion strength while simplifying the manufacturing process by eliminating an additional coating and curing step.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The multilayer structure significantly increases the shear strength of the dielectric layer, ensuring minimal stress on fragile wafers and panels, while meeting the demanding performance requirements of next-generation semiconductor packaging.
Implementation Method 1
at least one initiator capable of inducing a cross-linking reaction
Implementation Method 2
shear strength of the dielectric layer is increased by a factor of at least about 2 (e.g., by a factor of at least about 3) in the presence of the coupling layer
Data Source
AI summary
This disclosure relates to a multilayer structure containing: a substrate; a coupling layer deposited on the substrate; and a dielectric layer deposited on the coupling layer, wherein shear strength is increased by a factor of at least about 2 in the presence of the coupling layer compared to a multilayer in the absence of the coupling layer.